Skhynix Inc.

Woo Jae Chung

Seung Cheol Lee

Choung Sik Song

Dong Sun Sheen

Won Joon Choi

Young Ho Yang

Min Sung Ko

Jong Gi Kim

Jung Myoung Shim

Kwang Wook Lee

Kyeong Bae Kim

Hyeng Woo Eom

Provided herein is a semiconductor device and a method of manufacturing the same. The method includes alternately forming sacrificial layers and interlayer insulating layers on a semiconductor substrate. The method further includes forming a slit to expose the sacrificial layers by etching through the sacrificial layers and the interlayer insulating layers and forming interlayer openings by removing the exposed sacrificial layers. The method also includes depositing a conductive material in the interlayer openings and forming seams in which core patterns are deposited. The method additionally includes oxidizing a portion of the conductive material in the interlayer openings using a wet etching process and forming conductive patterns by removing the oxidized portion of the conductive material from the interlayer openings while leaving the seams intact.

Etchant composition, method of manufacturing semiconductor device using the same, and semiconductor device

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device through by-product removal from conductive layer

Growing community of inventors

Yongin-si, South Korea

Woo Jae Chung