Samsung Electronics Co., Ltd.

Woo-il Kim

Hui-Kwon Seo

Jung-rae Kim

Jung-Rae Kim

A method and apparatus adaptively controlling a page open time for a memory device are disclosed. The method includes determining a page open maintenance time of an access-requested page based on system information and intellectual property (IP) request information; and controlling closing of an open page based on the determined page open maintenance time.

Method and system controlling page open time for memory device

Disclosed is a pumping voltage generating circuit in a nonvolatile semiconductor memory device. The present pumping voltage generating circuit begins a pumping operation for a wordline voltage in response to an accelerating start signal activated from a supply of an external program voltage, rather than a pumping enable signal activated from a program command. According to the pumping voltage generating circuit, the wordline voltage reaches a target voltage earlier, remarkably enhancing an overall operation speed in a nonvolatile semiconductor memory device.

Pumping voltage generating circuit in nonvolatile semiconductor memory device

A circuit and method for generating a wordline voltage in a nonvolatile semiconductor memory device. The circuit comprises a switching unit to provide an external program voltage as the wordline voltage, together with a wordline voltage pump to generate the wordline voltage by pumping a power source voltage. After the wordline voltage is raised to a first level by the external program voltage, it is further increased by a pumping operation. According the circuit and method described herein, shortens the time required to reach a target voltage.

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Seoul, South Korea

Woo-il Kim