Samsung Electronics Co., Ltd.

Woo-Hyun Lee

Bum-Seok Yu

Jong-Kyu Kim

Jisoo Kim

Jong-Chul Park

Ji-Soo Kim

Hong-mook Choi

Sang-Kuk Kim

Xingguang Feng

Hye-Ji Yoon

Jong-Soon Park

Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.

Magnetoresistive random access memory devices and methods of manufacturing the same

Disclosed is a solid state disk including a storage unit configured to store data, and a control part configured to control enciphering and writing operation for the data using a key value and an initialization vector. The initialization vector is generated by processing an address corresponding to the data.

Solid state disk and input/output method

A storage apparatus including a storage unit to store data, a processor unit to process the data according to a command received from an external device, a key unit to store a plurality of crypto keys, and a decoder unit to select one of the crypto keys according to address information of the command received from the external device. Hardware encryption is more secure and less complex to manage.

Data storage apparatus having cryption and method thereof

An encryption/decryption method of an endecryptor including a plurality of endecryption units supporting an XES mode with tweak and ciphertext streaming (XTS) includes dividing an input data stream into consecutive data units; inputting the divided data units to the endecryption units, respectively; and simultaneously processing the input data units at the respective endecryption units. According to the encryption/decryption method, parallel processing is performed to encrypt/decrypt data at higher speed.

Endecryptor capable of performing parallel processing and encryption/decryption method thereof

Growing community of inventors

Seoul, South Korea

Woo-Hyun Lee