Samsung Display Co., Ltd.

Woo Geun Lee

Kap Soo Yoon

Sung Hoon Lim

Jae Beom Choi

Kang Nam Kim

Seung Sok Son

Kyu Sik Cho

Seok Hwan Bang

Jin-Won Lee

Young Jae Jeon

Joon Geol Kim

Ki-Won Kim

Kang Moon Jo

Seung-Ho Jung

Woo-Seok Jeon

June Whan Choi

Seul Ki Kim

Soo Jung Chae

Yoon Ho Kim

Young Joo Choi

Sho Yeon Kim

Byung Hwan Chu

Seung Ha Choi

Keum Hee Lee

Hee Jun Byeon

Su Jung Jung

Hye Young Ryu

Chun Won Byun

Woo Bin Lee

Sung Hwan Won

Hyung Jun Kim

Hyun Jung Kim

Jong-in Kim

Jae Hyun Lee

Jong-In Kim

Hyeon Jun Lee

Hyun-Jung Lee

Ji-Soo Oh

Hee-Jun Byeon

Si Jin Kim

Jin Won Lee

Jiyun Hong

Joongeol Kim

Se-Myung Kwon

Dong Hoon Shin

Sook-hwan Ban

Jung Kyoung Cho

Jung Ouck Ahn

Hyun Woong Baek

Hyun Seong Kang

Seung-ha Choi

A display device includes a first base portion, a first conductive layer comprising a lower light blocking layer on the first base portion, and a lower wiring spaced apart from the lower light blocking layer, a buffer layer disposed on the first conductive layer, a semiconductor layer disposed on the first buffer layer and comprising a first area, a second area on one side of the first area, and a third area on the other side of the first area, a gate insulating layer on the semiconductor layer, and a second conductive layer comprising a gate electrode overlapping the first area on the gate insulating layer, wherein conductivity of each of the first area and the second area is higher than conductivity of the first area, the third area is electrically connected to the lower wiring, and the second area is directly connected to the lower light blocking layer.

Display device and method of manufacturing the same

A display device according to an embodiment includes: a substrate; a first conductive layer positioned on the substrate; a semiconductor layer positioned on the first conductive layer; a second conductive layer positioned on the semiconductor layer; an oxygen supply layer positioned under the second conductive layer, in contact with the second conductive layer, and having the same planar shape as the second conductive layer; and a light-emitting element connected to the second conductive layer, wherein the oxygen supply layer includes a metal oxide that includes one or more of indium, zinc, tin, or gallium, or alloys thereof.

Display device and manufacturing method thereof

A scan driver includes a plurality of stages. An nth (n is a natural number) stage among the stages includes: a first and a second input circuit for controlling a voltage of a first node in response to a carry signal of a previous stage and a next stage, respectively; a first output circuit for outputting an nth carry signal corresponding to a carry clock signal in response to the voltage of the first node; a second output circuit for outputting an nth scan and an nth sensing signal corresponding to a scan and a sensing clock signal, respectively, in response to the voltage of the first node; and a sampling circuit for storing the carry signal of the previous stage in response to a first select signal, and for supplying a control voltage to the first node in response to a second select signal and the stored carry signal.

Scan driver and display device having the same

A display device includes a semiconductor layer of a driving transistor; a semiconductor layer of a switching transistor; a semiconductor layer of an initialization transistor; a gate electrode of the driving transistor overlapping a semiconductor layer of the driving transistor; a lower storage electrode connected to the semiconductor layer of the switching transistor; an upper storage electrode connected to the semiconductor layer of the driving transistor, a light blocking pattern, and the semiconductor layer of the initialization transistor, and overlapping the lower storage electrode; a semiconductor layer of a first auxiliary transistor adjacent the semiconductor layer of the switching transistor and/or the semiconductor layer of the initialization transistor; a first electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor; and a second electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor.

Display device and method for repairing the same

A display device including a substrate; a signal line disposed on the substrate and to which a predetermined voltage signal is applied; a power auxiliary line to which a first source voltage is applied; a first driving voltage line to which a first driving voltage higher than the first source voltage is applied; and a first transistor disposed between the signal line and the first driving voltage line. The first transistor includes a first lower gate electrode connected to the power auxiliary line and a first upper gate electrode connected to the signal line.

Display device having electrostatic protection circuit

A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

Method of manufacturing thin film transistor, method of manufacturing display apparatus and thin film transistor substrate

A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.

Display device having multiple insulating layers of same material

A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

Display device

A display device includes a substrate and a transistor disposed on the substrate and including a semiconductor layer, wherein the semiconductor layer includes a mesh structure, and wherein a plurality of openings are formed in the semiconductor layer.

Display device having a semiconductor layer with a mesh structure

A display device includes a substrate having a display area and a pad area. A gate conductive layer disposed on the substrate includes a gate conductive metal layer and a gate capping layer. The gate conductive layer forms a gate electrode in the display area and a wire pad in the pad area that is exposed by a pad opening. An interlayer insulating film disposed on the gate conductive layer covers the gate electrode. A data conductive layer disposed on the interlayer insulating film in the display area includes source and drain electrodes. A passivation layer disposed on the data conductive layer covers the source and drain electrodes. A via layer is disposed on the passivation layer. A pixel electrode is disposed on the via layer. The pixel electrode is connected to the source electrode through a contact hole penetrating the via layer and the passivation layer.

Display device with gate conductive layer forming wire pad in pad area and method of fabricating the same

A gate driver for a display device includes: a clock signal line to transfer a clock signal; and a plurality of stages to sequentially output a gate signal based upon the clock signal in response to a carry signal. The plurality of stages include a plurality of thin film transistors, and at least one of the plurality of thin film transistors includes a thin film transistor including an oxide semiconductor. The at least one thin film transistor includes a first gate electrode and a second gate electrode disposed in different layers, the oxide semiconductor is disposed between the first gate electrode and the second gate electrode, and the first gate electrode and the second gate electrode are connected to receive a common voltage signal.

Gate driver and display device including the same

One or more exemplary embodiments disclose a thin film transistor array panel and a manufacturing method thereof including a substrate, a gate line on the substrate, the gate line including a gate electrode, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, and the semiconductor layer including an oxide semiconductor, a data wire layer above the semiconductor layer, the data wire layer including a data line, a source electrode coupled to the data line, and a drain electrode facing the source electrode, and a metal phosphorus oxide layer configured to cover the source electrode and the drain electrode.

Thin film transistor array panel and method for manufacturing the same

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Yongin-si, South Korea

Woo Geun Lee