Samsung Electronics Co., Ltd.

Woo-Dong Lee

Seong-Jin Jang

Jin-ho Kim

Nam-seog Kim

Uk-Song Kang

Byung-sik Moon

Hoon Bok Lee

Dong-hyeon Jang

Shin Hyoung Kim

Ju-Il Choi

Tae-sung Park

Sang-Sick Park

Nam-Seog Kim

Min-Young Son

Tae-Gyeong Chung

Hee-jin Lee

Jin-Hyuk Lee

Keum-Hee Ma

Son-Kwan Hwang

Hee-Jin Lee

Ji-Han Ko

Min-Seung Yoon

A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion. Thus, the protrusion may not be deflected.

Multi-chip package and method of manufacturing the same

A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

3D semiconductor device

A semiconductor package includes a circuit board comprising a first surface and a second surface opposite the first surface. A first semiconductor chip is stacked on the first surface and a second semiconductor chip stacked on the first semiconductor chip. A region of the second chip protrudes beyond a side of the first semiconductor chip. A support underpins the protruding region of the second chip. The support may be, for example, dry film solder resist dam.

Semiconductor package including chip support and method of fabricating the same

A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion.

Multi-chip package with a supporting member and method of manufacturing the same

A semiconductor device having semiconductor chips of different thicknesses is provided. The semiconductor device may include a first semiconductor chip, a sub-board on a first side of the first semiconductor chip, at least one second semiconductor chip on a second side of the first semiconductor chip, at least one external contact terminal on the at least one second semiconductor chip. In example embodiments the at least one second semiconductor chip may include a plurality of through silicon vias and the at least one external contact terminal may be in electrical contact with the first semiconductor chip and the at least one second semiconductor chip via the plurality of through silicon vias. In example embodiments, the at least one second semiconductor chip may be thinner than the first semiconductor chip.

Multi-chip package having semiconductor chips of different thicknesses from each other and related device

Provided are a memory card and a method of fabricating the memory card. The memory card includes: a printed circuit board including conductive wires exposed to at least a portion of an outer wall of the printed circuit board; at least one electronic device mounted on the printed circuit board; and a molding part sealing the at least one electronic device on the printed circuit board and the conductive wires exposed to the outer wall of the printed circuit board, and simultaneously exposing at least a portion of the outer wall of the printed circuit board.

Memory cards and method of fabricating the memory cards

According to various embodiments of the present invention, a bonding pad structure of a semiconductor device reduces damage caused by thermo-mechanical stress in beam lead bonding. A method of fabricating an improved bonding pad structure is also provided. A polysilicon film plate is preferably formed between a bonding pad metal layer and a dielectric layer. The polysilicon film plate absorbs external thermo-mechanical stress and improves the durability of the bonding pad in a bond pull test (BPT). The bonding between the bonding pad metal layer and the dielectric layer is also improved. Other features and advantages are also provided.

Semiconductor device bonding pad resistant to stress and method of fabricating the same

Growing community of inventors

Cheonan-si, South Korea

Woo-Dong Lee