Skhynix Inc.

Woo Cheol Lee

Won Tae Koo

A semiconductor device may include first and second transistors on a substrate. The first transistor may include first and second source/drain regions; a first channel region between the first and second source/drain regions; a first gate electrode over the first channel region; and a charge retention node between the first channel region and the first gate electrode. The second transistor may include third and fourth source/drain regions, a portion of the third source/drain region being connected to the charge retention node; a second channel region between the third and fourth source/drain regions; and a second gate electrode over the second channel region.

Semiconductor device including charge retention node

A semiconductor device according to an embodiment of the present disclosure includes a first electrode, a first resistance change layer disposed on the first electrode, a conduction control layer disposed on the first resistance change layer, a second resistance change layer disposed on the conduction control layer, and a second electrode disposed on the second resistance change layer. The conduction control layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.

Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same

A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate electrode layer disposed over the substrate, a gate dielectric layer disposed on the gate electrode layer, a channel electrode layer disposed on the gate dielectric layer, a threshold switching layer disposed on the channel electrode layer, and a source electrode layer and a drain electrode layer that are disposed on the threshold switching layer to be spaced apart from each other.

Semiconductor devices performing threshold switching

Disclosed semiconductor devices include a substrate, a device pattern structure disposed over the substrate, and a heat insulating layer disposed on the device pattern structure. The device pattern structure includes metal-organic frameworks.

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Icheon-si, South Korea

Woo Cheol Lee