Samsung Electronics Co., Ltd.

Woo-chang Lim

Woo-Jin Kim

Jang-Eun Lee

Se-Chung Oh

Young-Hyun Kim

Jun-ho Jeong

Jeong-Heon Park

Suk-Hun Choi

Hee-Ju Shin

Ju-hyun Kim

Jun-Ho Jeong

Whan-Kyun Kim

Joon-Myoung Lee

Deok-Hyeon Kang

Eun-sun Noh

Jea-Hyoung Lee

A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.

Magnetic memory device

A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Method of manufacturing a magnetoresistive random access memory device

A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a &#x3c;002&#x3e; crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the &#x3c;002&#x3e; crystal direction with respect to a surface of the second seed layer.

Magnetic memory layer and magnetic memory device including the same

A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

Magnetic device

A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.

Method of fabricating semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Woo-chang Lim