Up Chemical Co., Ltd.

Asm Genitech Korea Ltd.

Korea Research Institute of Chemical Technology

Wonyong Koh

Won Seok Han

Myeong-Ho Park

Herbert Terhorst

Dae Youn Kim

Sang Jin Jeong

Hyung-Sang Park

Kyung Il Hong

Dong Hwan Ma

Dae-Young Kim

Yunsoo Kim

Sungwoo Ahn

Yun Tae Kim

So Young Kim

Byungsoo Kim

Sujin Ku

Yoon A Park

A compound represented by chemical formula 4 is reacted with an alkali metal carbonate salt represented by chemical formula 5 and 1,5-hexadiene, in an organic solvent, and by controlling a compound represented by chemical formula 1, a compound represented by chemical formula 2 and a compound represented by chemical formula 3 to within a specific content range, a ruthenium precursor composition that is thermally very stable is provided in an economical and efficient manner. When a ruthenium-containing film is formed by using the ruthenium precursor composition, changes in the composition of the ruthenium precursor composition is prevented during a process in which the ruthenium precursor composition is vaporized, or even thereafter, production of by-products such as pyrolysis substances or the like is minimized, and accordingly, deposition results having stable and constant properties is obtained in a semiconductor process.

Ruthenium precursor composition, preparation method therefor, and formation method for ruthenium-containing film using same

The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.

Aluminum compounds and methods of forming aluminum- containing film using the same

The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.

Group 4 metal element-containing compounds, method of preparing the same, precursor compositions including the same for forming a film, and method of forming a film using the same

Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD), where M is Co or Ni and DAD is a diazadiene ligand.

Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition

The present disclosure provides a Group 4 metal element-containing novel alkoxy compound, a method of preparing the Group 4 metal element-containing alkoxy compound, a precursor composition including the Group 4 metal element-containing alkoxy compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

Group 4 metal element-containing alkoxy compound, preparing method thereof, precursor composition including the same for film deposition, and method of depositing film using the same

The present disclosure provides a Group 4 metal element-containing novel compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

Group 4 metal element-containing compound, method of preparing the same, precursor composition including the same for depositing film, and method of depositing film using the same

The present disclosure relates to a novel ruthenium compound, a method for preparing the ruthenium compound, a precursor composition for depositing a ruthenium-containing film including the ruthenium compound, and a method for depositing a ruthenium-containing film by using the precursor composition.

Ruthenium compound, preparation method therefor, precursor composition for film deposition containing same, and method for depositing film by using same

The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.

Indium-containing oxide film and preparing method thereof

The present disclosure is related to an aluminum-containing precursor composition, especially a precursor composition which is vaporized to be used for vapor phase deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).

Aluminum precursor composition

The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

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Daejeon, South Korea

Wonyong Koh