Samsung Electronics Co., Ltd.

Dnf Co., Ltd.

Sk Specialty Co., Ltd

Wonik Materials

Wonwoong Chung

Younjoung Cho

Sunhye Hwang

Taehyung Kim

Jin Wook Lee

Sang Ick Lee

Pankwi Park

Myong Woon Kim

Jungsik Choi

Keum Seok Park

Jeongho Yoo

Sang Yong Jeon

DoHoon Kim

Heejun Park

In Kyung Jung

Mijeong Kim

Jinhee Lee

Yeonock Han

Heonjong Jeong

Byung Koo Kong

Younglae Kim

Handuck Song

Byeongok Cho

Youngha Song

Changeun Jang

Byungkil Lee

Yonghun Shin

Sungdo Lee

A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

Gas container and deposition system including the same

An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

Etching gas compositions, methods of forming micropatterns, and methods of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

Gas storage cylinder, deposition system, and method of manufacturing semiconductor device

A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si&#x2014;CHbonding unit to Si&#x2014;O bonding unit ranges from 0.5 to 5.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked on a substrate, and forming a recess region by etching the first and second etching layers under plasma generated from an etching gas including a compound. The compound comprises at least one of 1,1,1,2,3,3-hexafluoropropane, 2,2,2-trifluoroethane-1-thiol, 1,1,1,3,3-pentafluoropropane, 1,1,2,2,3-pentafluoropropane and 1,1,2,2-tetrafluoro-1-iodoethane, 2,3,3,3-tetrafluoropropene and 1,1-difluoroethene.

Method for fabricating semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Wonwoong Chung