L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

American Air Liquide, Inc.

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Wontae Noh

Clément Lansalot-Matras

Jooho Lee

Jean-Marc Girard

Daehyeon Kim

Satoko Gatineau

Venkateswara R Pallem

Julien Gatineau

Christian Dussarrat

Julien Lieffrig

Junhyun Song

Methods for forming a Group V-containing film comprise: wherein M is a Group V (five) element selected from V, Nb, or Ta; R is H, Me, Et, nPr, iPr, nBu, sBu, iBu, tBu, n-pentyl, i-pentyl, neo-pentyl, or tert-amyl; each R, R, Ris independently H, an alkyl group, or a —SiR's group, with each R' independently being H or an alkyl group; and each R, R, R, R, Ris independently H, Me, Et, nPr, iPr, nBu, sBu, IBu, or tBu. Methods for deposition of a LiNbOfilm on a powder are disclosed.

Group V element-containing film compositions and vapor deposition of Group V element-containing film

A Metal-containing film forming composition comprising a precursor having the formula: M(=NR)(OR)(OR)L. Wherein, M=V or Nb or Ta; R-R=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes: m=0 or 1.

Method of forming dielectric films, new precursors and their use in the semi-conductor manufacturing

Disclosed is a method for improving step coverage of a film deposited on high aspect ratio (HAR) apertures in a substrate. The method comprises i) sequentially or simultaneously exposing the substrate to a vapor of an inhibitor, a vapor of a precursor and a vapor of a co-reactant; and ii) allowing the film with a desired step coverage being deposited on the surface of the HAR apertures through a vapor deposition process, wherein the inhibitor contains O, N, S, P, B, C, F, Cl, Br, or I.

Step coverage using an inhibitor molecule for high aspect ratio structures

The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula:LM(&#x2014;N(R)&#x2014;(CR')&#x2014;NR&#x2033;)wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R&#x2033; each are independently a C-Clinear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R&#x2032; is H or a C-Clinear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4,wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

Area selective deposition of metal containing films

Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n&#x3e;1; each R is independently an H or a C-Chydrocarbyl group; L is a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is an H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is an H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Lanthanide precursors and deposition of lanthanide-containing films using the same

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; each R is independently a H or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; o and p is independently 0, 1 or 2; o+p&#x3e;1; each R is independently hydrogen or or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and each L&#x2032; is independently NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L-M-CR-[(ER)&#x2014;NR]&#x2014;, wherein M is Ti, Zr, or Hf bonded in an &#x3b7;bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C-Chydrocarbon group; and each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group and adjacent R&#x2032;s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is Cto C. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Disclosed are Niobium-containing film forming compositions, methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via atomic layer deposition processes using the Niobium-containing film forming compositions.

Niobium-containing film forming compositions and vapor deposition of Niobium-containing films

Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.

Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films

Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.

Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films

Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.

Niobium-containing film forming compositions and vapor deposition of niobium-containing films

Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.

Growing community of inventors

Seoul, South Korea

Wontae Noh