Samsung Electro-mechanics Co., Ltd.

Wonsun Hwang

Byeonghak Jo

Youngsik Hur

Yoosam Na

Hyunjin Yoo

Shinhaeng Heo

Jongmo Lim

Dongil Kang

Hyun Paek

Jinyong Kim

Suyeon Han

Kangta Jo

A radio frequency (RF) switch includes a switch transistor, and a bias transistor having a body terminal and a first terminal connected to each other, a diode-connected configuration, and configured to provide a first current to a body terminal of the switch transistor corresponding to a voltage applied to a control terminal of the switch transistor.

Radio frequency switch

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

A charge pump circuit is provided. The charge pump circuit includes a first switch configured to have a first end connected to an input terminal that receives a power voltage; a second switch configured to have a first end connected to the input terminal; a first capacitor configured to have a first end connected to a second end of the first switch; a second capacitor connected between a second end of the first capacitor and a second end of the second switch; a third switch connected between the second end of the second switch and ground; a fourth switch connected between the first end of the first capacitor and a first output terminal and configured to output a first output voltage; and a fifth switch connected between a second output terminal and a node between the first capacitor and the second capacitor, and configured to output a second output voltage.

Charge pump circuit and operating method thereof

A radio frequency (RF) switch system, an RF switch protective circuit, and a protecting method thereof are provided. The RF switch system may include an RF switch and a protective circuit. The RF switch may be connected between a port that receives an RF signal and a ground. The protective circuit may detect a first voltage that is a voltage that is generated when the first RF switch is turned off, and may transmit an impedance value that is varied based on the first voltage to the port.

Radio frequency switch system, radio frequency switch protective circuit, and protecting method thereof

An RF switch circuit is provided. The RF switch circuit may include a first switch disposed between a transmitting port and an antenna port and including a plurality of first transistors; a second switch disposed between the antenna port and a receiving port and including a plurality of second transistors; and a switch control circuit configured to generate control voltages to control the first transistors and the second transistors, generate a first Off voltage to turn off at least one first transistor among the plurality of first transistors and the plurality of second transistors in a transmitting mode, and generate a second Off voltage to turn off at least one second transistor among the plurality of first transistors and the plurality of second transistors in a receiving mode, wherein the second Off voltage may be higher than the first Off voltage.

Radio frequency switch circuit and operating method thereof

A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

Capacitor circuit and variable capacitance system including the same

A power amplifier, a power amplifier system, and an operating method thereof are provided. The power amplifier system may include a power amplifier, a power amplifier controller, and a voltage generator. The power amplifier may include a plurality of power transistor cells each of which receives an RF signal through a control terminal thereof to amplify the RF signal. The power amplifier controller may control turn-on and turn-off operations of at least one power transistor cell among the plurality of power transistor cells based on a power mode. The voltage generator may generate a power supply voltage supplied to first terminals of the power transistor cells and may change the power supply voltage depending on the power mode.

Growing community of inventors

Suwon-si, South Korea

Wonsun Hwang