Qualcomm Mems Technologies, Inc.

Wonsuk Chung

Teruo Sasagawa

Ming-Hau Tung

Clarence Chui

Jeffrey Brian Sampsell

Manish Kothari

Mark W Miles

Suryaprakash Ganti

James Randolph Webster

Stephen Zee

Xiaoming Yan

Thanh Nghia Tu

Steve Zee

Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices

Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

Electromechanical devices having support structures

A microelectromechanical systems device having an electrical interconnect connected to at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a movable layer of the device. A thin film, particularly formed of molybdenum, is provided underneath the electrical interconnect. The movable layer preferably comprises aluminum.

MEMS device and interconnects for same

The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer may include silicon-rich silicon nitride.

Silicon-rich silicon nitrides as etch stops in MEMS manufacture

MEMS devices having support structures

A method of fabricating a MEMS device includes the formation of support posts having horizontal wing portions at the edges of the post. A mechanical layer is deposited over the support posts and portions of the mechanical layer overlying portions of the support post other than the horizontal wing portions are etched away. A resultant MEMS device includes a mechanical layer overlying at least a portion of the horizontal wing portions of the underlying support structures.

Patterning of mechanical layer in MEMS to reduce stresses at supports

The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.

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San Jose, CA, United States of America

Wonsuk Chung