Samsung Electronics Co., Ltd.

Wonkeun Kim

Yongwon Choi

Inyoung Lee

In-Young Lee

Taeje Cho

Yeongseok Kim

Myung-Sung Kang

Chang-Seong Jeon

Ji-Han Ko

Joungphil Lee

Hwail Jin

Mihyae Park

Cheonil Park

Myoungchul Eum

Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.

Method of fabricating semiconductor device and method of separating substrate

A semiconductor package includes at least one semiconductor device mounted on a first substrate, a thermosetting resin layer on the at least one semiconductor device, the thermosetting resin layer including an irreversible thermochromic pigment, a metal plate on the thermosetting resin layer, and a molding member surrounding the at least one semiconductor device at least in a lateral direction and being in contact with the thermosetting resin layer.

Thermal interface material paste and semiconductor package

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

Semiconductor chip, semiconductor device, and semiconductor package including the semiconductor chip

A carrier substrate and a packaging method, the carrier substrate including a first layer; a second layer; and a first glue layer between the first layer and the second layer, wherein the first glue layer is removably attached to the first layer.

Carrier substrate and packaging method using the same

A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

Flip chip bonding method

Provided are semiconductor packages and methods of fabricating the same. The method may include mounting a first semiconductor chip including chip and heat-transfer regions and a lower heat-transfer pattern disposed on the heat-transfer region, on a substrate, mounting a second semiconductor chip on the chip region of the first semiconductor chip, forming a mold layer on the substrate to enclose the first and second semiconductor chips, forming an opening in the mold layer to expose at least a portion of the lower heat-transfer pattern, forming a heat-pathway pattern in the opening, and forming a heat-dissipating part on the second semiconductor chip and the mold layer to be connected to the heat-pathway pattern.

Semiconductor package and method of fabricating the same

A semiconductor package includes a circuit substrate, a semiconductor chip on the circuit substrate, an inner solder ball between the circuit substrate and the semiconductor chip, and dummy solder filling a dummy opening in at least one of an substrate insulation layer of the circuit substrate and a chip insulation layer. The dummy solder does not electrically connect the semiconductor chip with the substrate. The circuit substrate may include a base substrate, a substrate connection terminal on the base substrate, and the substrate insulation layer covering the base substrate. The semiconductor chip may include a chip connection terminal and the chip insulation layer exposing the chip connection terminal. The inner solder ball may be interposed between the substrate connection terminal and the chip connection terminal to electrically connect the circuit substrate to the semiconductor chip.

Growing community of inventors

Hwaseong-si, South Korea

Wonkeun Kim