Seagate Technology Incorporated

Other

Wonjoon Jung

Mark William Covington

Zheng Gao

Dimitar Velikov Dimitrov

Mark Thomas Kief

Haiwen Xi

Yuankai Zheng

Qing I He

Wenzhong Zhu

Olle Gunnar Heinonen

Xiaohua Lou

Xuebing Feng

Victor Sapozhnikov

Paul E Anderson

Yonghua Chen

Dian Song

Marcus Winston Ormston

Dion Song

Sameh Hassan

Wei Tian

Sharat Batra

David A Deen

Thomas Roy Boonstra

Sunita B Gangopadhyay

Vladyslav Alexandrovich Vas'ko

Sung-Hoon Gee

Taras Pohkil

Dimitar Velikov Demitrov

A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Magnetic sensor manufacturing

A read sensor that includes a free layer having a magnetization that changes according to an external magnetic field. The read sensor also includes an additional magnetic layer and a non-magnetic layer. The non-magnetic layer may include a corrugated surface facing the additional magnetic layer. The corrugated surface is configured to enhance uniaxial anisotropy in the read sensor.

Magnetoresistive sensor with enhanced uniaxial anisotropy

A lateral spin valve reader and fabrication method thereof. The method includes forming an injector, a detector and a common channel layer that extends from the injector to the detector. The method also includes forming a first channel layer between the common channel layer and at least one of the injector or the detector with the first channel layer in contact with the common channel layer, thereby providing an interface between the first channel layer and the common channel layer.

Lateral spin valve reader and fabrication method thereof

A reader includes a bearing surface, a sensor stack and a bottom shield below the sensor stack. The bottom shield has a synthetic antiferromagnetic (SAF) structure that includes a first magnetic layer that has a first width at the bearing surface and a second magnetic layer that has a second width at the bearing surface. The second width is less than the first width. The second magnetic layer has a magnetic orientation with at least a component that is substantially orthogonal to the bearing surface.

Magnetoresistive sensor having a synthetic antiferromagnetic bottom shield

A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

Positive and negative magnetostriction ultrahigh linear density sensor

A magnetic element may be configured with at least a magnetic stack having first and second magnetically free layers that each has a predetermined stripe height from an air bearing surface (ABS). The first and second magnetically free layers can respectively be configured with first and second uniaxial anisotropies that are crossed in relation to the ABS and angled in response to the predetermined stripe height.

Magnetic element with crossed anisotropies

A data storage device may be constructed as a data reader in various embodiments with a magnetic stack that has a barrier layer disposed between first and second magnetically free layers. The magnetic stack may have a horizontally symmetrical configuration that provides negative exchange coupling between the magnetically free layers.

Tuned horizontally symmetric magnetic stack

Various embodiments may be generally directed to a magnetic sensor constructed with a decoupling layer that has a predetermined first morphology. A magnetic free layer can be deposited contactingly adjacent to the decoupling layer with the magnetic free layer configured to have at least a first sub-layer having a predetermined second morphology.

Varyinig morphology in magnetic sensor sub-layers

A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

Coupling feature in a magnetoresistive trilayer lamination

Various embodiments may configure a magnetic stack with a magnetically free layer, a reference structure, and a biasing layer. The magnetically free layer and reference structure can each be respectively configured with first and second magnetizations aligned along a first plane while the biasing layer has a third magnetization aligned along a second plane, substantially perpendicular to the first plane.

Magnetic stack with orthogonal biasing layer

Various embodiments may be constructed with a trilayer stack that is positioned on an air bearing surface (ABS). The trilayer stack can be configured with a stripe height along an axis orthogonal to the ABS and with first and second magnetic free layers that each has an angled uniaxial anisotropy with respect to the ABS.

Tuned angled uniaxial anisotropy in trilayer magnetic sensors

A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Magnetic stack having assist layers

A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.

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Eden Prairie, MN, United States of America

Wonjoon Jung