Samsung Electronics Co., Ltd.

Wonje Park

Hongki Kim

Junetaeg Lee

Yu Jin Ahn

Younghoon Park

JeongWook Ko

Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

Image sensor and method of fabricating the same

An image sensor is provided. The image sensor includes an interlayered dielectric structure having a first recess region, in which an organic photoelectric layer is provided, and a second recess region, in which a color filter is provided. The second recess region may be provided under the first recess region.

Growing community of inventors

Yongin-si, South Korea

Wonje Park