Samsung Electronics Co., Ltd.

Samung Electronics Co., Ltd

Wonil Lee

Jeongyeob Oak

Jisoo Song

Sejin Park

Hyoeun Kim

Jihoon Kim

Taehwan Kim

Sunkyoung Seo

Minki Kim

Yukyung Park

Sanguk Han

Ungcheon Kim

Hyunjung Song

Sungwoo Park

Hyuekjae Lee

Janghee Lee

Seunghoon Yeon

Gwangjae Jeon

Yonghoe Cho

Sangcheon Park

Juhyeon Kim

Heonwoo Kim

Youngkun Jee

Jaehwan Jeon

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises lower and upper structures. The lower structure includes a first semiconductor substrate, a first pad, and a first dielectric layer. The upper structure includes a second semiconductor substrate, a second pad, and a second dielectric layer. The upper and lower structures are bonded to each other to allow the first and second pads to come into contact each other and to allow the first and second dielectric layers to come into contact each other. A first interface between the first and second pads is at a level different from that of a second interface between the first and second dielectric layers. A first area of the first pad is greater than a second area of the second pad. A second thickness of the second pad is different from a first thickness of the first pad.

Semiconductor device and method of fabricating the same

A semiconductor package includes a first semiconductor chip including a first substrate and a first bonding layer disposed on the first substrate, and having a flat first outer surface provided by the first bonding layer; and a second semiconductor chip disposed on the first outer surface of the first semiconductor chip, including a second substrate and a second bonding layer disposed on the second substrate, and having a flat second outer surface provided by the second bonding layer and contacting the first outer surface of the first semiconductor chip. The first bonding layer includes a first outermost insulating layer providing the first outer surface, a first internal insulating layer stacked between the first outermost insulating layer and the first substrate, first external marks disposed in the first outermost insulating layer and spaced apart from each other, and first internal marks interlaced with the first external marks within the first internal insulating layer.

Semiconductor chip and semiconductor package including bonding layers having alignment marks

A semiconductor package is provided in which a first insulating layer includes a first recess spaced apart from a first pad in a first direction, and a second insulating layer includes a second recess spaced apart from a second pad in the first direction and overlapping at least a portion of the first recess in a second direction, perpendicular to the first direction, to provide an air gap together with the first recess. The semiconductor package further includes a first bonding surface defined by the first and second insulating layers contacting each other on one side of the air gap, adjacent to the first and second pads, and a second bonding surface defined by the first and second insulating layers contacting each other on another side of the air gap, opposite to the one side.

Semiconductor package, and method of manufacturing the same

An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

Interposer, method for fabricating the same, and semiconductor package having the same

The present disclosure relates to a research that has been conducted with the support of the 'Cross-Departmental Giga KOREA Project' funded by the government (the Ministry of Science and ICT) in 2017 (No. GK17N0100, millimeter wave 5G mobile communication system development). The present disclosure relates to a communication technique for convergence of a 5G communication system for supporting a higher data transmission rate beyond a 4G system with an IoT technology, and a system therefor. The present disclosure may be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety-related service, etc.) on the basis of a 5G communication technology and an IoT-related technology.

Method and device for communication between network entities in cloud LAN environment

A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

Semiconductor package

A semiconductor device including an interposer including a central region and an edge region entirely surrounding the central region, wherein the interposer includes a wiring structure disposed in the first region and a metal structure disposed continuously within the entirety of the second region, a first semiconductor chip mounted in the central region and connected to the wiring structure, and a second semiconductor chip mounted in the central region adjacent to the first semiconductor chip and connected to the second wiring structure.

Semiconductor devices

A method and apparatus are provided that controls the handover between DUs in an eNB including a CU and a DU. The method and system fuses 5G communication systems with IoT technology to transmission data at a high rate after 4G systems. The communication method and system is applied to intelligent services, based on 5G communication technology and IoT related technology. The method includes transmitting, to a source DU of the base station, a first message related to a handover; receiving, from the source DU, a second message for downlink data delivery information related to a PDU transmitted from the source DU to a terminal; receiving, from a target DU of the base station, a third message based on a random access procedure of the terminal toward the target DU; and transmitting, to the target DU, downlink data based on the downlink data delivery information after receiving the third message.

Method and apparatus for controlling handover in wireless communication system

Disclosed is a fifth generation (5G) or pre-5G communication system for supporting data transmission rate higher than that of a fourth generation (4G) communication system such as long term evolution (LTE). The objective of the present disclosure is to detect a mismatch of an encryption parameter in a wireless communication system, and an operating method of a reception end includes the steps of: receiving, from a transmission end, a packet including information related to a serial number of the packet and an encryption parameter determined on the basis of the serial number; determining whether the encryption parameter determined by the reception end is mismatched, on the basis of the information related to the serial number and the encryption parameter.

Device and method for detecting mismatch of encryption parameter in wireless communication system

The present disclosure relates to a 5G (5generation) or pre-5G communication system for supporting a higher data transmission rate than a 4G (4generation) communication system such as Long Term Evolution (LTE). In accordance with various embodiments of the present disclosure, a device in a Central Unit (CU) connected to a Distributed Unit (DU) and a fronthaul in a wireless communication system may comprise: a communication interface for performing signaling between the CU and the DU; and at least one processor for determining whether to control a congestion state of the DU on the basis of the signaling, and when controlling the congestion state of the DU, stopping transmission of at least one packet to the DU before processing a Packet Data Convergence Protocol (PDCP).

Growing community of inventors

Seongnam-si, South Korea

Wonil Lee