Samsung Electronics Co., Ltd.

Wonil Bae

Daehyun Kim

Kyungryun Kim

Minho Choi

Hyongryol Hwang

Hohyun Shin

Sanghoon Jung

Jaeseong Lim

Dae Hyun Kim

Seungki Hong

Seok Jin Cho

Byungkyu Song

Heonsu Jeong

Disclosed is a sense amplifier which includes a pre-amplifier that is connected between an input node receiving an input signal and a first node, a second switch connected between the first node and a first output node outputting an output signal, an amplifier connected between the first output node and a second output node outputting an inverted output signal, and a second switch connected between the input node and the second output node. The pre-amplifier includes an inverter connected between the input node and the first node, and a third switch connected between the input node and the first node.

Sense amplifier including pre-amplifying circuit and memory device including the same

A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.

Voltage trimming circuit

A semiconductor memory device and a memory system are provided. The semiconductor memory device includes a fingerprint read signal generator configured to generate a fingerprint read signal in response to a refresh counting control signal, a memory cell array comprising a plurality of sub memory cell array blocks, a fingerprint output unit configured to receive data output from memory cells connected to one selected among a plurality of word lines and one selected among a plurality of bit lines of one among the plurality of sub memory cell array blocks in response to the fingerprint read signal to generate fingerprint data, and a pseudorandom number generator configured to perform a linear feedback shifting operation in response to an active command to generate sequence data, receive the fingerprint data in response to the fingerprint read signal, and generate the sequence data based on the fingerprint data.

Semiconductor memory device and memory system having the same

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Seongnam-si, South Korea

Wonil Bae