Samsung Electronics Co., Ltd.

Wonhyung Song

Jangseok Choi

Taekwoon Kim

Jungmin You

Hoyoun Kim

Hosung Yoon

Yoojung Lee

Hyunjoong Kim

Younghoe Kim

Joonseok Choi

A memory device including: a memory cell array including memory cell rows; and a control logic circuit to perform a row, write, read, or pre-charge operation on the memory cell rows in response to an active, write, read, or pre-charge command, wherein the control logic circuit is further configured to: calculate a first count value by counting the active command and a second count value by counting the write command or the read command, with respect to a first memory cell row, during a row hammer monitor time frame; determine a type of row hammer of the first memory cell row based on a ratio of the first count value to the second count value; and adjust a pre-charge preparation time between an active operation and the pre-charge operation, by changing a pre-charge operation time point according to the determined type of row hammer.

Method of controlling row hammer and a memory device

A memory system includes a memory module and a memory controller. The memory module includes data chips that store data and are assigned to a first sub-channel that generates a first code word or a second sub-channel that generates a second code word, where the first code word and the second code are used to fill a single cache line. The memory controller, upon detection of a hard-fail data chip among the data chips, copies data from the hard-fail data chip to the ECC chip, releases mapping between the hard-fail data chip and corresponding I/O, and defines new mapping between the ECC chip and the corresponding I/O pins.

Memory module with reduced ECC overhead and memory system

A memory module includes first memory chips, each having a first input/output width, and configured to store data, a second memory chip having a second input/output width and configured to store an error correction code for correcting an error in the data, and a driver circuit configured to receive a clock signal, a command, and an address from a memory controller and to transmit the clock signal, the command, and the address to the first memory chips and the second memory chip. An address depth of each of the first memory chips and an address depth of the second memory chip are different from each other.

Memory module, error correction method of memory controller controlling the same, and computing system including the same

A memory controller configured to control a memory module including a plurality of memory devices which constitute a first channel and a second channel includes an error correction code (ECC) engine, and a control circuit configured to control the ECC engine. The ECC engine is configured to generate a codeword including a plurality of symbols by adaptively constructing, based on device information including mapping information, each of the plurality of symbols from a predetermined number of data bits received via a plurality of input/output pads of each of the plurality of memory devices, and transmit the codeword to the memory module. The mapping information indicates whether each of the plurality of input/output pads is mapped to the same symbol among the plurality of symbols or different symbols among the plurality of symbols. Each of the plurality of symbols corresponds to a unit of error correction of the ECC engine.

Growing community of inventors

Osan-si, South Korea

Wonhyung Song