Semiconductor Components Industries, LLC

Wonhwa Lee

Gary Horst Loechelt

Jaegil Lee

Kwangwon Lee

A power semiconductor device includes a semiconductor layer having a first conductivity type. A pillar is provided in the semiconductor layer and has a second conductivity type that is different than the first conductivity type. A first trench gate is provided in the pillar proximate to a first vertical edge of the pillar. A second trench gate is provided in the pillar proximate to a second vertical edge of the pillar, the second vertical edge being on an opposing side of the pillar of the first vertical edge. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.

Split trench gate super junction power device

A method of forming a power semiconductor device includes providing an epi layer over a substrate; forming a well at an upper portion of the epi layer; forming a pillar below the well and spaced apart from the well to define a Schottky contact region; etching a trench into the epi layer, the trench having a sidewall and a base, a portion of the sidewall of the trench corresponding to the Schottky contact region; forming a metal contact layer over the sidewall and the base of the trench, the metal contact layer forming a Schottky interface with the epi layer at the Schottky contact region; and forming a gate electrode and first and second electrodes.

Power device having super junction and Schottky diode

In a general aspect, a method can include forming a first pillar of a first conductivity type and a second pillar of a second conductivity type, alternately disposed with the first pillar. The second pillar can be in direct contact with the first pillar. The method can also include forming an implant of the second conductivity type in an upper portion of the second pillar. The implant can have a doping concentration that is higher than a doping concentration of a lower portion of the second pillar. The method can further include forming a Schottky metal layer having a first portion directly disposed on an upper surface of the first pillar and a second portion directly disposed on the implant along an upper surface of the second pillar. The first portion of the Schottky metal layer can be wider than the second portion of the Schottky metal layer.

Merged p-intrinsic-N (PIN) Schottky diode

A power semiconductor device includes a semiconductor layer having a first conductivity type. A trench is defined within the semiconductor layer, the trench having an opening, a sidewall and a base. A pillar is provided below the trench and has a second conductivity type that is different than the first conductivity type. A metal layer is provided over the sidewall of the trench, the metal layer contacting the semiconductor layer at the sidewall of the trench to form a Schottky interface of a Schottky diode. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.

Power device having super junction and schottky diode

In a general aspect, a device can include a substrate, a first pillar of a first conductivity type, a second pillar of a second conductivity type, the first pillar and the second pillar being alternately disposed, and a metal layer having a first portion disposed on the first pillar and a second portion disposed on the second pillar. The first portion of the metal layer can be wider than the second portion of the metal layer.

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Bucheon-si, South Korea

Wonhwa Lee