Vanguard International Semiconductor Corporation

Other

Applied Materials, Inc.

Wong-Cheng Shih

Pravin K Narwankar

Turgut Sahin

Randall Scott Urdahl

Guan-Jye Peng

Chich-Shang Chang

Lan Lin Chao

Tai-Bor Wu

Lan-Lin Chao

A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.

Method for forming a dielectric-constant-enchanced capacitor

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H ). In a prefered embodiment of the present invention the ambient comprises H and N .

Anneal for enhancing the electrical characteristic of semiconductor devices

A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.

Method of fabricating dielectric layer

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

Hydrogen anneal for curing defects of silicon/nitride interfaces of

Growing community of inventors

Hsinchu, Taiwan

Wong-Cheng Shih