Samsung Electronics Co., Ltd.

Lg Semicon Co., Ltd.

Won Young Jung

Young Jin Cho

Doo Young Ryu

Jeong Hoon Kang

Joon Sung Lee

A balancer includes a balancer housing coupled to a drum of a washing machine, the balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, at least one magnet to restrain movement of the mass along the channel when rotational speed of the drum is within a predetermined range, and at least one magnet fixing member coupled to an outside of the balancer housing to receive and fix the magnet.

Balancer and washing machine having the same

A balancer includes a balancer housing coupled to a drum of a washing machine, the balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, at least one magnet to restrain movement of the mass along the channel when rotational speed of the drum is within a predetermined range, and at least one magnet fixing rib formed at one side of the balancer housing to fix the magnet.

A washing machine having a balancer to offset unbalanced load generated during rotation of a drum. The washing machine includes a cabinet, a drum rotatably disposed in the cabinet, and a balancer mounted to the drum to offset unbalanced load generated in the drum during rotation of the drum. The balancer includes a balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, a magnet provided at one side of the balancer housing to restrain the mass, and a magnet case to receive the magnet.

This invention relates to a semiconductor device and method for fabricating the semiconductor device, for forming a source and drain structure having no side diffusion. The semiconductor device includes a silicon substrate, a gate formed on the silicon substrate with a gate insulation film in between, and a source and drain formed of conductive material layers buried in the substrate to a designated depth at opposite sides of the gate, thereby providing a source with no side diffusion, preventing reduction of channel length, and improving element integration.

Method of making a semiconductor device with recessed source and drain

This invention relates to a nonvolatile semiconductor memory element having elevated source and drain regions, a well-shaped floating gate surrounding a control gate, and leveled surface, and a method for fabricating the same. The nonvolatile semiconductor memory element includes a first conduction type substrate having a channel region, an elevated source and drain regions of second conduction type formed to have a step on the substrate separated by the channel region, a floating gate insulation film formed on exposed surfaces of the substrate corresponding to the channel region and the source and drain regions, as well-shaped floating gate formed on the floating gate insulation film on the channel region having a fixed depth and a fixed thickness, a control gate having a fixed thickness formed fully buried in the well of the floating gate so that the floating gate can surround the control gate, and an interlayer insulation film formed between the floating gate and the control gate so as to insulate the floating gate and the control gate.

Growing community of inventors

Seoul, South Korea

Won Young Jung