Samsung Electronics Co., Ltd.

Yonsei University

Won-young Chung

Young-Tae Kim

Tai-Kyung Kim

Seung-Ki Chae

Keun-Ho Lee

Young-Nam Hwang

Ui-hui Kwon

Jong-su Park

Kwang-Ho Cha

Gyeong-su Keum

Jai-hyung Won

Young-kwan Park

Ha-young Jeong

Yong Surk Lee

A method of performing collective communication in a collective communication system includes processing nodes, including: determining whether a command message, regarding one function among a broadcast function, a scatter function, and a gather function, is generated by a processor; determining a transmission order between the processing nodes by giving transmission priorities to processing nodes that do not communicate, based on a status of each of the processing nodes if it is determined that the command message regarding the one function among the broadcast function, the scatter function, and the gather function, is generated by the processor; and performing communication with respect to the command message based on the determined transmission order.

Method of performing collective communication according to status-based determination of a transmission order between processing nodes and collective communication system using the same

The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Ion implanters having an arc chamber that affects ion current density

A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

Phase change memory devices including memory elements having variable cross-sectional areas

Growing community of inventors

Gyeonggi-do, South Korea

Won-young Chung