Samsung Electronics Co., Ltd.

Vanam Inc.

Korea Institute of Science and Technology

Cheil Industries Inc.

Won Young Choi

Soo Deok Han

Hyun Woo Koo

Yong Woo Lee

Tae Young Lee

Hyung-jun Kim

Suk Hee Han

Seung Bo Shim

Joonyeon Chang

Young Jin Noh

In Kyung Lee

Ji Soo Im

Jae Hoon Choung

Kyung Sun Kim

Ji Chul Yang

A heating system of the present disclosure includes: a heating element configured to generate heat; a thermoelectric device disposed adjacent to the heating element; and a switching device electrically connected to the thermoelectric device and configured to maintain a temperature of the heating element within a set temperature range by switching current that is supplied to the thermoelectric device based on the temperature of the heating element.

Heating system and electronic device having the same

The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.

Oxide thin film

A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.

Plasma processing apparatus

A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.

Ferromagnet-free spin transistor and method for operating the same

Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a quaternary ammonium base; and (c) a fluorinated surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound. Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.

Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same

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Seoul, South Korea

Won Young Choi