Samsung Electronics Co., Ltd.

Dow Silicones Corporation

Won Woong Chung

Youn Joung Cho

Jung Sik Choi

Xiaobing Zhou

Brian David Rekken

Michael David Telgenhoff

Byung Keun Hwang

Sun Yong Hwang

Sun Hye Hwang

A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

A method of forming a dielectric film includes providing a substrate in a chamber, and forming a silicon nitride film on the substrate using an atomic layer deposition (ALD) method in which a first gas including a silicon precursor containing hexachlorodisilazane (HCDZ) and a second gas containing a nitrogen ingredient are introduced into the chamber.

Method for forming dielectric film and method for fabricating semiconductor device

There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

Method of fabricating a semiconductor device

Growing community of inventors

Suwon-si, South Korea

Won Woong Chung