Samsung Electronics Co., Ltd.

Won-taek Park

Vladimir Volynets

Yuri Nikolaevich Tolmachev

Jin-woo Yoo

Young-eal Kim

Vasily Pashkovski

Young-Eal Dormitory Of Samsung Kim

Vladimir Dormitory Of Samsung Volynets

A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordingly, it is possible to make the mutual inductance between the coils small, to accurately adjust levels and phase differences of currents to be applied to the coils, and also to simplify the driving circuit.

Plasma accelerator

A plasma accelerator () is disclosed that has three separate sections of coils (-) disposed outside the plasma chamber (). The separate sections of coils include an initial discharge section (-), an acceleration section (-), and a nozzle section (-). Each section of coils is driven by signals of a different frequency to more efficiently discharge and accelerate a plasma in the plasma accelerator ().

Driving frequency modulation system and method for plasma accelerator

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.

Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same

An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.

Electromagnetic induced accelerator based on coil-turn modulation

An electromagnetic induced accelerator includes internal and external circular loop inductors for inducing a magnetic field when a current is applied to the internal and external circular loop inductors in a same direction, the internal and external circular loop inductors being spaced apart from each other by a predetermined distance and disposed coaxially and parallel to each other; a channel, which includes dielectric layers contacting the internal and external circular loop inductors, disposed between the internal and external circular loop inductors, wherein a secondary current is induced in the channel between the dielectric layers by the induced, magnetic field; and a discharging coil for supplying a pulse energy to the channel and for generating a plasma.

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Seoul, South Korea

Won-taek Park