Samsung Electronics Co., Ltd.

Won-Taeck Jung

Sang-Wan Nam

Jinwoo Park

Jaeyong Jeong

Junghoon Park

Sang-Won Park

Su Chang Jeon

Sunil Shim

Dongku Kang

Donghun Kwak

Kyung-min Kang

Tae-Min Park

Jung Ho Lee

Jinman Han

Sang-Hyun Joo

Jun-Ho Seo

Hyungsoo Kim

Ohsuk Kwon

Sang Yong Yoon

Jin-Man Han

Tae-hong Kwon

Jaewoo Im

Han-Jun Lee

Dae Sik Ham

Gi Baek Kim

So-Yeong Gwak

A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.

Non-volatile memory device and memory system including the same and program method thereof

A nonvolatile memory may include; a first memory cell array including a first selection transistor connected to a first string selection line, a second memory cell array including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line, and a peripheral circuit. The peripheral circuit may provide a first program voltage to the first selection transistor, provide a second program voltage to the second selection transistor different from the first program voltage, program the first selection transistor with a first threshold voltage in response to the first program voltage, and program the second selection transistor with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.

Nonvolatile memory and storage device including same

Disclosed is a nonvolatile memory device, which includes a memory cell array including cell strings, a row decoder connected with a ground selection transistor of each of the cell strings through a ground selection line, connected with memory cells of each of the cell strings through word lines, and connected with a string selection transistor of each of the cell strings through a string selection line, and a page buffer connected with the cell strings through bit lines. In a first period of a check operation, the page buffer applies a first bias voltage to the bit lines, and the row decoder applies a turn-off voltage to the ground selection line, a turn-on voltage to the string selection line, and a first check voltage to the word lines. In a second period of the check operation, the page buffer senses first changes of voltages of the bit lines.

Nonvolatile memory device and storage device including nonvolatile memory device

A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

Nonvolatile memory device and operation method thereof

A method of programming a nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.

Non-volatile memory device and an operation method thereof

A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

Three-dimensional nonvolatile memory and method of performing read operation in the nonvolatile memory

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.

Nonvolatile memory device and operating method of the same

A nonvolatile memory includes a plurality of memory blocks, a plurality of source drivers corresponding to the plurality of memory blocks, a plurality of pass transistor groups connected between the plurality of source drivers and the plurality of memory blocks, a plurality of block pass transistors connected between a plurality of block word lines and the plurality of pass transistor groups, a plurality of block decoders corresponding to a plurality of memory block groups respectively, and a block pass transistor decoder configured to control voltages of block select lines connected to the plurality of block pass transistors. The plurality of memory blocks are divided into the plurality of memory block groups. Each block decoder is configured to control voltages of block word lines, among the plurality of block word lines, connected to at least two memory blocks of a corresponding memory block group in common.

Nonvolatile memory and storage device including nonvolatile memory

Growing community of inventors

Hwaseong-si, South Korea

Won-Taeck Jung