Samsung Electronics Co., Ltd.

Won-tae Lee

Jung-hyun Lee

Young-Soo Park

You-seop Lee

A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.

Neutral beam etching device for separating and accelerating plasma

A heating structure of an inkjet printhead and an inkjet printhead including the heating structure. The heating structure includes a substrate, a heater formed on the substrate, an electrode formed on the heater, a passivation layer formed to cover the heaters and the electrodes, and carbon nanotubes (CNTs) formed in the passivation layer.

Heating structure with a passivation layer and inkjet printhead including the heating structure

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

Plasma accelerating apparatus and plasma processing system having the same

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.

Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel

In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

Method of fabricating semiconductor memory device

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion includes a chalcogenide material layer which undergoes a phase change due to heating of the heating portion to store data therein. The heating material layer is disposed under the chalcogenide material layer, and the top surface of the heating material layer is oxidized using a plasma oxidation process to increase a resistance value. Accordingly, the heat capacity necessary for the chalcogenide material layer can be transmitted using a small amount of current, and current used in the semiconductor memory device can be further reduced.

Growing community of inventors

Hwaseong-gun, South Korea

Won-tae Lee