Samsung Electronics Co., Ltd.

Won-sok Lee

Choong-Ho Lee

Dong-Gun Park

Jae-Man Yoon

Seong-goo Kim

Seung-bae Park

Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.

Growing community of inventors

Gyeonggi-do, South Korea

Won-sok Lee