Samsung Electronics Co., Ltd.

Won-sik Shin

Hyun-young Kim

Rak-Hwan Kim

Jung-Hwan Oh

Young-Joo Cho

Young-sun Kim

Woong Hee Lee

Ki-Hyun Hwang

Dong-hwan Kim

Jin-Hong Kim

Hyeon-Deok Lee

Seok-Woo Nam

Beom-jun Jin

Eun-ae Chung

U-in Chung

Ki-hyun Hwang

Sang-Kyoung Lee

Hee-Seok Kim

Seok-woo Nam

Hyo-jung Kim

A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.

Capacitor and method of manufacturing the same

A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the semiconductor substrate, forming a first preliminary polysilicon layer in communication with the tunneling insulation layer and the device isolation regions, forming a preliminary amorphous silicon layer on the first preliminary silicon layer, forming a second preliminary polysilicon layer on the preliminary amorphous silicon layer, and patterning the second preliminary polysilicon layer, the preliminary amorphous silicon layer, and the first preliminary polysilicon layer to form a floating gate layer.

Nonvolatile memory device and method of manufacturing the same

A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySiGelayer stacked on the metallic layer. Methods of forming these capacitors also are provided.

Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes

In a method of forming an oxide layer, ozone is generated by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow rate. A reactant including the ozone and nitrogen is provided onto a silicon substrate. A surface of the silicon substrate is oxidized via the reaction of the reactant with silicon in the silicon substrate. The flow rate of the nitrogen gas is increased while ozone serving as an oxidant is formed by reacting the nitrogen gas with the oxygen gas. Thus, the oxide layer or a metal oxide layer including nitrogen may be rapidly formed on the substrate.

Method of oxidizing a silicon substrate and method of forming an oxide layer using the same

Growing community of inventors

Seoul, South Korea

Won-sik Shin