Samsung Electronics Co., Ltd.

Won-seok Lee

Tae-hyuk Ahn

Sang-sup Jeong

Ji-soo Kim

Wan-jae Park

Kyoung-sub Shin

Jae-myoung Choi

Seong-soo Shin

Hyun-goo Woo

A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate. The processing apparatus includes a reaction chamber including a spin chuck which supports the semiconductor substrate for rotation, a gas supply unit for supplying a process gas to the reaction chamber, a gas injection unit for injecting the process gas supplied by the gas supply unit into the reaction chamber in a direction parallel to the major surface of the semiconductor substrate, and an exhaust unit for exhausting gases from the reaction chamber.

Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask

A drying unit and method of drying for a liquid electrophotographic printing apparatus, the drying unit that is equipped in the printing apparatus comprising a developing unit that develops an image on an photosensitive medium using a liquid carrier as a mediator and a transfer unit that transcribes the developed image on a printing paper, so that the liquid carrier remaining on the photosensitive medium can be dried. The drying unit for the liquid electrophotographic printing apparatus is positioned near the photosensitive medium and includes a manifold having an inlet and an outlet; an inlet-outlet channel being between the inlet and the outlet and connecting them; a gas flowing unit by which the gas in the manifold is discharged through the outlet and gas flows in the manifold through the inlet; a condenser that condenses the evaporated carrier discharged through the outlet; and a heater that heats the gases flowing in the manifold through the inlet. Also, the liquid carrier drying method includes determining the injection condition; heating injection air according to the determined gas injection condition and evaporating the carrier on the photosensitive medium by injecting the heated gas at a predetermined speed in the manifold; discharging out of the manifold the carrier evaporated from the photosensitive medium and the air flowing in; and condensing the evaporated carrier at the manifold, of reheating the gas that is not condensed, injecting the gas at a predetermined speed into the manifold.

Drying unit for liquid electrophotographic printing apparatus and liquid carrier drying method using the same

A bit line structure for semiconductor devices, and a fabrication method thereof are provided. In this method, a first conductive film pattern, which fills a first contact hole and is used as a bit line, is formed on a first dielectric film pattern having the first contact hole formed on a semiconductor substrate. A lower part protecting layer pattern, comprised of an anti-reflectance coating (ARC) layer used in a process for patterning the first dielectric layer pattern, is formed on the interface between the first conductive layer pattern and the first dielectric layer pattern. A spacer for covering the sidewall of the first conductive film pattern is formed. An upper part protecting layer pattern comprised of an upper ARC layer is formed to cover the upper part of the first conductive layer pattern. A second dielectric layer pattern having a second contact hole is formed to cover the first conductive layer pattern. A second conductive layer pattern filling the second contact hole is formed and used as a storage node of a capacitor.

Method of fabricating a bit line structure for a semiconductor device

Growing community of inventors

Sungnam, South Korea

Won-seok Lee