Samsung Electronics Co., Ltd.

Won-Moon Cheon

Chan-Ik Park

Dong-Gun Kim

Sung-up Choi

Seon-Taek Kim

Gyu-Dong Shim

Dae-Ho Kim

Jae-hoon Heo

Yang-sup Lee

Min-Wook Jung

Yang-Sup Lee

Hong-Moon Wang

A storage system includes a storage device and a host device. The storage device includes a nonvolatile memory device having a first size and a first volatile memory device having a second size smaller than the first size and configured to operate as a cache memory with respect to the nonvolatile memory device. The first volatile memory device is configured to allow a first bus portion access to cache data stored in the first volatile memory device. The host device is configured to generate a cache table corresponding to information in the cache data stored in the first volatile memory device and configured to read the cache data stored in the first volatile memory device via the first bus portion based on the cache table.

Storage system and method of operating the same

A computing system includes a host and a storage device. The host includes a central processing unit (CPU) and a first volatile memory device. The storage device includes a second volatile memory device and a nonvolatile memory device. The CPU uses the first volatile memory device and the second volatile memory device as a main memory to store temporary data used for operation of the CPU. The CPU determines a swap-out page to be swapped-out of first pages stored in the first volatile memory device, determines a swap-in page to be swapped-in of second pages stored in the second volatile memory device, and exchanges the swapped-out page and the swapped-in page.

Computing systems and methods of operating computing systems

An electronic system includes a host device and a storage device. The storage device includes a first memory device that is accessed by the host device by units of a byte through a byte accessible interface and a second memory device that is accessed by the host device by units of a block through a block accessible interface. The storage device performs an internal data transfer between the first memory device and the second memory device based on an internal transfer command that is provided through the block accessible interface from the host device. The electronic system may efficiently support the access by units of a byte and the access by units of a block between the host device and the storage device by performing internal data transfer in the storage device using the internal transfer command that is modified from the existing block access command.

Storage device supporting byte accessible interface and block accessible interface and electronic system including the same

In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Flash memory device with multi-level cells and method of performing operations therein according to a detected writing patter

A method of controlling a memory system that comprises a first flash memory device and a memory controller, the method comprising counting a first timeout when a sudden power off occurs, resetting the first flash memory device when the first timeout expires, and dumping data to the first flash memory device.

Method of controlling memory system in the event of sudden power off

Memory blocks of a nonvolatile memory device are managed by identifying a full memory block, determining whether a block life of the full memory block exceeds a threshold value, and upon determining that the block life of the full memory block exceeds the threshold value, selecting the full memory block as a target block for garbage collection. The threshold of the block life is determined using an average write distance of logical pages programmed in the nonvolatile memory device.

Selection of memory blocks for garbage collection based on variable block life threshold

Flash memory device with multi-level cells and method of writing data therein

A method for managing data in a storage device includes: receiving a logical page from a host and calculating an actual time stamp of the logical page; finding a block of the storage device in which the logical page is stored and detecting a time stamp of the block and a page offset of the logical page stored in the block; calculating an approximate time stamp of the logical page stored in the block using the time stamp of the block and the page offset; and determining that the logical page is in a first state if the difference between the actual time stamp and the approximate time stamp is smaller than a threshold value, and determining that the logical page is in a second state different from the first state if the difference between the actual time stamp and the approximate time stamp is larger than the threshold value.

Method for managing data in storage device and memory system employing such a method

A memory system and corresponding method of wear-leveling are provided, the system including a controller, a random access memory in signal communication with the controller, and another memory in signal communication with the controller, the other memory comprising a plurality of groups, each group comprising a plurality of first erase units or blocks and a plurality of second blocks, wherein the controller exchanges a first block from a group with a second block in response to at least one block erase count within the group; and the method including receiving a command having a logical address, converting the logical address into a logical block number, determining a group number for a group that includes the converted logical block number, and checking whether group information comprising block erase counts for the group is loaded into random access memory, and if not, loading the group information into random access memory.

Growing community of inventors

Hwaseong-si, South Korea

Won-Moon Cheon