Dnf Co., Ltd.

Won Mook Chae

Sang Ick Lee

A Ra Cho

Myong Woon Kim

Joong Jin Park

Sang Yong Jeon

Haeng Don Lim

Sang Jun Yim

Kang Yong Lee

Se Jin Jang

Sung Gi Kim

Jeong Joo Park

Sam Dong Lee

Jeong Hyeon Park

Byeong Il Yang

Myoung Woon Kim

Gun Joo Park

Heang Don Lim

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

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Daejeon, South Korea

Won Mook Chae