Skhynix Inc.

Hynix Semiconductor Inc.

Won Kyung Kang

Duck Ju Kim

Sam Kyu Won

Soo Jin Kim

Cheul Hee Koo

Eui Suk Kim

Jin Suk Lee

Jun Seop Jeong

Sung Hyuk Jung

A computational storage device comprises a shared memory directly accessible by a host, a computational storage processor, a storage media configured to store base data, and a storage processor. The computational storage processor reads request information written to the shared memory by the host, and responds to the host with result data for the request information. The computational storage processor reads base data stored in a storage media, extracts result data from the base data, writes the result data to the shared memory, and transmits, to the host, a notification indicating that the result data has been written to the shared memory.

Computational storage device communicating with host using shared memory and operating method thereof

A memory controller includes: a map cache area for storing a map cache lines including mapping information between a logical address and a physical address; a victim map cache line selector for selecting a victim map cache line among the map cache lines, using a victim map cache line selection model trained by using a storage state information as training data, when a physical address corresponding to a logical address of an operation request is absent in the map cache area; and a map data controller for removing the selected victim map cache line from the map cache area, providing the removed victim map cache line to a memory device, receiving a target map cache line including the physical address corresponding to the logical address of the operation request from the memory device, and storing the target map cache line in the map cache area.

Memory controller for selecting victim map cache line and operating method thereof

A semiconductor memory device and an operating method of the semiconductor memory device change a read voltage used in a read operation by performing a moving read operation, a randomize operation, and a program/erase compensation operation independently or in combination, thereby stably performing the read operation without an error and reducing a time for the read operation even when distribution of threshold voltages of the memory cells is changed according to a program/erase cycling effect or a retention effect.

Semiconductor memory device and operating method based upon a comparison of program data and read data thereof

A data storage device includes a nonvolatile memory device, an error correction code unit suitable for detecting and correcting a data error read from the nonvolatile memory device in response to an operation clock, and a clock unit suitable for selectively providing the operation clock to the error correction code unit depending on whether the data is read from the nonvolatile memory device or not.

Data storage device

A semiconductor device includes a memory cell array includes a plurality of memory blocks, each of the memory blocks including a plurality of pages, wherein at least one of the plurality of memory blocks functions as a first storage unit to store a plurality of page addresses associated with the plurality of pages. A second storage unit loads a page address stored in the first storage unit. A control circuit is configured to cancel a program operation if an externally inputted page address is less than or equal to the page address loaded into the second storage unit, and perform the program operation and update the second storage unit with the externally inputted page address if the externally input page address is greater than the page address loaded into the second storage unit.

Semiconductor device and method of operating the same

A method for operating a semiconductor memory device including a memory block constituted by first memory cells used as main memory cells and second memory cells includes reading out an erase count of the memory block stored in the second memory cells, erasing the memory block, increasing the read-out erase count, and storing the increased erase count in the second memory cells.

System, semiconductor memory device and operating method thereof

The present technology relates to an electronic device, and more particularly, to a semiconductor device. The semiconductor device includes a peripheral circuit, a power output line connected to the peripheral circuit and configured to transmit an operation voltage to the peripheral circuit, a current compensator including an OP-amplifier connected to the power output line, and a capacitor connected between an output terminal of the OP-amplifier and the power output line.

Semiconductor device including current compensator

A semiconductor memory device includes a memory cell block configured to include a plurality of main cells and a plurality of CAM cells, a plurality of page buffers configured to store data to be programmed into the memory cell block, and a Y decoder configured to transfer CAM data to respective page buffers, selected from among the plurality of page buffers, in response to a data determination signal and CAM column addresses whenever the CAM data is inputted in a CAM data input mode.

Semiconductor memory device and programming method thereof

A multi-chip package includes a plurality of memory chips for performing a content addressable memory (CAM) read operation in response to a command signal for the CAM read operation and an address signal for selecting the memory chips and a controller for outputting the command signal and the address signal to the memory chips and controlling the sequence of the CAM read operations for the memory chips.

Multi-chip package and method of operating the same

A data output circuit in an NAND flash memory device is disclosed. The data path circuit in a flash memory includes at least one switching means configured to output one or more internal address signals in accordance with a data output control signal, and one or more data output circuit configured to output data when a specific internal address signal is outputted through the switching means.

Data path circuit in a flash memory device

A well bias circuit in a memory device includes a well voltage supplying circuit configured to apply a high voltage to a well for erasing data in a memory cell. A well discharging circuit is configured to discharge the high voltage applied to the well in accordance with a first control signal after the data in the memory cell is erased. A well-to-ground circuit is configured to control the well bias to obtain a ground voltage in accordance with a second control signal. A control circuit is configured to activate the well discharging circuit for a predetermined time when power is turned on.

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Seoul, South Korea

Won Kyung Kang