Skhynix Inc.

Won Kyung Chung

Seung Hun Lee

Saeng Hwan Kim

A memory apparatus may include a row hammer control circuit. The row hammer control circuit may generate a plurality of selection control signals by monitoring an interval at which a memory bank of a memory cell array is accessed. The row hammer apparatus may set a threshold value for performing a refresh operation, as one of a plurality of values, based on the plurality of selection control signals.

Memory apparatus mitigating row hammer and semiconductor system using the same

A mode register control circuit may include a masking signal generation circuit and a storage control pulse generation circuit. The masking signal generation circuit may be configured to generate a masking signal from data. The storage control pulse generation circuit may be configured to generate a storage control pulse for controlling a mode register write operation, from a mode register write pulse in response to the masking signal.

Semiconductor system including mode register control circuit

A circuit for setting a reference voltage is provided. The circuit includes a reference voltage information storage unit and a reference voltage input/output (I/O) control unit. The reference voltage information storage unit is configured to set a level of a reference voltage according to information stored in a first register or a second register if a training operation starts in a first set mode. The reference voltage I/O control unit is configured to set a level of the reference voltage according to first data or second data if the training operation starts in a second set mode.

Circuits for setting reference voltages and semiconductor devices including the same

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may output set signals. The second semiconductor device may generate a start signal in response to the set signals, generate an input control code and an output control code from the set signals in response to the start signal, generate a frequency determination signal including information on an operation frequency in response to the output control code, and control an internal operation in response to the frequency determination signal.

Semiconductor devices and semiconductor systems including the same

A semiconductor device may include a first channel provided in a first die. The semiconductor device may include a second channel provided in a second die and disposed adjacent to the first channel, and configured to exchange signals and data with the first channel. The first channel and the second channel may receive and output calibration-related signals from and to each other through bonding, and may share calibration start signals. The calibration start signal may be respectively generated in the first channel and the second channel.

Semiconductor device

A semiconductor system includes a controller and a semiconductor device. The controller generates a clock signal and updates external count signals in response to an external update signal. The semiconductor device generates count signals by counting pulses of a strobe signal during a period when a section signal is in an active state. The section signal is generated in response to a first control signal including pulses that are periodically generated. The semiconductor device also generates the external update signal and the external count signals if a combination of the count signals is changed.

Semiconductor system with training function for a data strobe signal

A data driving impedance auto-calibration circuit includes: a detection block configured to calibrate a characteristic voltage generated by detecting an operation characteristic variation of an element, according to a code signal, and generate a calibrated characteristic voltage; a comparison block configured to compare the calibrated characteristic voltage with a reference voltage and output a comparison result signal; and a code calibration block configured to calibrate the code signal according to the comparison result signal.

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Icheon-si, South Korea

Won Kyung Chung