Lg Innotek Co., Ltd.

Sungkyunkwan University

Korea Advanced Nano Fab Center

Won Kyu Park

Seok Bae

Dong Hwan Kim

Jin Hong Park

Hyun Min Nah

Hyun Seok Lim

Dong Hwan Jun

Jong Gon Heo

Goon Seung Gong

Jae Woo Shim

An embodiment discloses a method of manufacturing a rare-earth magnet, the method including: preparing a magnetic sintered body including RE, Fe, and B as compositional components (RE is selected from one or two or more selected from rare earth elements); applying a solution containing a grain boundary diffusion material to the sintered body; and performing grain boundary diffusion by heat-treating the sintered body, wherein the grain boundary diffusion material includes a heavy rare earth element (HREE) hydride and a light rare earth element (LREE) hydride.

Method for manufacturing rare earth magnet

This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600&#x2dc;700&#xb0; C. for 1&#x2dc;3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

Method of healing defect at junction of semiconductor device using germanium

Growing community of inventors

Daegu, South Korea

Won Kyu Park