Korea Institute of Science and Technology

Korea Gas Corporation

Lg Electronics Inc.

Won Kook Choi

Hyung Jin Jung

Seok Keun Koh

Seok-Keun Koh

Dong Hee Park

Jung Woo Cho

Byung Ha Kang

Seok Kyun Song

Dong Ick Son

Kyong Sop Han

Young Soo Yoon

Hong Kyu Jang

Jin Seok Jeon

Dongsoo Choi

Sik Sang Gam

Ki Hwan Kim

Ji Won Choi

Cheol Hwan Kim

Ji-Won Choi

Seok Jin Yoon

Sam Chul Ha

Jae Kap Lee

Seok-Jin Yoon

Do Kyung Hwang

Yong Bai Son

Sang Yub Ie

Jong Han Song

Byoung Wook Kwon

Chang Hwan Wie

Sung-Chang Choi

Kyeong Kook Kim

The present disclosure relates to a carbon fiber composition and a fabrication method for high-performance carbon fiber using the same. The method can fabricate high-performance carbon fiber (or graphite fiber) with lowering a graphitization temperature by using graphene carbon fiber composition including nano-sized graphene.

Carbon fiber composition including graphene nano-powder and fabrication method for carbon fiber using the same

Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

Anti-reflection nano-coating structure

Disclosed are methods for preparing pure graphene using chemical bonding between graphite oxide and metal oxide nanoparticles, and graphene and nanoparticles having a quasi metal oxide-graphene core-shell prepared therefrom. The disclosed methods for preparing graphene allow chemical bonding and separation through a simple acid treatment process using inexpensive materials. Also, because the reaction can be carried out at low temperature, the processing cost is low. And, pure graphene with few impurities can be prepared quickly in large scale.

Method for producing graphene by chemical exfoliation

The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO) are introduced into a (Ba,Sr)TiO(BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnOaccording to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiOwhile having a very low dielectric loss.

Dielectric thin film composition showing linear dielectric properties

The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved.

AC-driven light emitting device having single active layer structure and manufacturing method thereof

According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and there is also provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using an RF plasma.

Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning

An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage () applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.

Apparatus for surface modification of polymer, metal and ceramic materials using ion beam

Substrate that is vapor-deposited with dopant-added ZnO thin film is loaded into a heat-treating chamber, and heat-treated quickly under gas atmosphere to activate the dopant. A thin film phosphor having new luminescence peak can be fabricated by quick-heat-treatment of zinc compound semiconductor under hydrogen atmosphere. This thin film phosphor can replace the conventional blue luminescence using alloy-type ZnO and furthermore can be utilized as blue light emitting material for flat plate display elements such as FED and PDP.

Fabrication method of blue light emitting ZnO thin film phosphor

An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O ) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.

Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor

An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (,) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.

A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.

Process for modifying surfaces of materials, and materials having surfaces modified thereby

An electrical or electronic device and a thin-film type battery are vertically integrated and interconnected for reducing the area occupied thereby, enabling a higher degree of device integration and simplifying their fabrication. An insulating layer is formed on the device, with vertical conductors extending respectively from a pair of terminals of the device through the insulating layer. Electrode conductors are formed on the insulating layer in contact with the respective vertical conductors and serve as the cathode and anode electrodes of a thin-film battery fabricated thereon.

Method for making electrical and electronic devices with vertically integrated and interconnected thin-film type battery

A process for modifying a metal surface by irradiating energized ion particles onto a metal surface while blowing a reactive gas directly on the metal surface under a vacuum condition. The process can achieve the effect of decreasing the wetting angle of the polymer or metal surface and enhancing the strength and the surface energy of the metal.

Method for modifying metal surface

A process for modifying a nitride surface includes irradiating energized ion particles onto the nitride surface while blowing a reactive gas directly on the nitride surface under a vacuum condition. An aluminum nitride for a direct bond copper (DBC) can be obtained by forming a thin copper film on the thusly modified nitride.

Process for modifying surfaces of nitride, and nitride having surfaces

The present invention relates to a sensor for detecting hydrocarbon type gas such as methane gas and propane gas, and process for manufacturing thereof. SiO.sub.2 was deposited in 1 .mu.m by ion beam sputtering with a mixed gas (3:2) of argon and oxygen on a silicon wafer in the process. In case of a propane sensor, platinum electrode is deposited in 600 .ANG. by ion beam sputtering on a tin oxide thin film synthesized by ionized beam of which the oxygen ion energy is 0 to 500 eV by using poly alumina. In case of a methane sensor, heat treatment at 500.degree. C. was performed for 1 hour in the air in order for the thin film to be stable at high operation temperature, while heat treatment was not performed in case of propane sensor. The sensor was manufactured by adding platinum or palladium thereto by argon ion beam sputtering. The thin film type tin oxide sensor according to the present invention exhibited an excellent selectivity of 47.4% even at low temperature of 150.degree. C. at a gas concentration of 3,000 ppm in case of the methane sensor, while a sensor having high electric sensitivity and selectivity as 93.4% was obtained in case of the propane sensor.

Growing community of inventors

Seoul, South Korea

Won Kook Choi