Db Hitek Co., Ltd.

Won Kook Cho

Myeong Bum Pyun

Disclosed are a superjunction semiconductor device and a method of manufacturing the same. More particularly, a superjunction semiconductor device and a method of manufacturing the same include an additional structure that enables smooth current flow in a transition region and/or a ring region of the device, where the current concentrates locally during turn-on/turn-off operations of the device due to insufficient current paths compared to the cell region of the device, thereby improving reverse recovery characteristics and preventing device destruction.

Superjunction semiconductor device and method of manufacturing same

A superjunction semiconductor device with an epitaxial layer having different effective thicknesses and a method of manufacturing the same are disclosed. The superjunction semiconductor device includes an epitaxial layer having different thicknesses in a cell region and a ring region to decrease a breakdown voltage of the cell region relative to a breakdown voltage of the ring region so as to reveal a characteristic of the breakdown voltage of the cell region.

Growing community of inventors

Bucheon-si, South Korea

Won Kook Cho