Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Won-Kie Chang

Chong-Chul Chai

Shi-Yul Kim

Jun-Hyung Souk

Sang-Gab Kim

Hi-Kuk Lee

Soo-Wan Yoon

Soo-Jin Kim

Sang-Woo Whangbo

Mee-Hye Jung

Woo-Geun Lee

Young-Wook Lee

Jin-Wook Lee

Dong-Uk Choi

Jung-In Park

Chi-Woo Kim

Woo-Seok Jeon

Won Young Song

Geun-Soo An

Gi-Cheon Yoon

Young-chan Kweon

Jeong-Sik Yoo

You-Keun Kim

Kyung-seob Kim

A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

Display device, method of manufacturing the same and mask for manufacturing the same

A television system comprises a display panel holder for detachably holding a display panel for displaying images, and a signal processing module for receiving and processing signals containing displayable information from various external sources and supplying the signals to the display panel. The system enables the size of the display screen of an existing TV set to be easily increased in a cost-effective manner, thereby preventing a waste of resources.

Television system with replaceable display panel

A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.

Mask and method of manufacturing the same

An inline transfer system and method are provided for the secure transport and efficient processing of substrates such as glass substrates or semiconductor devices. A rotary conveyor is provided that includes a plurality of air nozzles which inject air to move a substrate above the plurality of air nozzles without the plurality of air nozzles making contact with the substrate. At least two independent processing units are operably coupled to the rotary conveyor. Advantageously, because a plurality of substrates may be processed in parallel, greater efficiency and flexibility are provided. Because the substrate can be moved without physical contact between the structure of the air nozzles and the substrate, the transfer is secure, clean, and efficient.

Inline transfer system and method

The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.

Method for manufacturing thin film transistor array panel

A liquid crystal display having a gate insulating film of whose dielectric constant is a high and exhibits excellent leakage characteristics, includes a plurality of gate wirings formed on the transparent substrate, a plurality of signal lines arrayed to intersect the plurality of gate wirings, a plurality of switching devices located at the point of intersection between the respective gate wirings and signal lines. The switching device comprises a gate electrode constituted by aluminum or an aluminum alloy and a gate insulating film inserted between the channels of switching devices and the gate electrode. The gate insulating film has a first anodic oxide film constituted by aluminum or an aluminum alloy and a second anodic oxide film constituted by tantalum or a tantalum alloy. In the manufacturing method thereof, metals, aluminum or tantalum, are simultaneously anodically oxidized so as to suppress a hillock. An insulating layer having a high dielectric constant can be easily obtained while a leakage current characteristic is strengthened and its breakdown voltage is improved. A glass substrate can be protected since second and third anodic oxide films (Ta.sub.2 O.sub.5) are formed on the entire surface of the substrate.

Method for manufacturing a flat-panel display

Growing community of inventors

Seoul, South Korea

Won-Kie Chang