Samsung Electronics Co., Ltd.

Won-keun Kim

Teak-Hoon Lee

Kyung-suk Oh

Myung-Sung Kang

Yeong-seok Kim

Hwa-il Jin

Ho-Geon Song

Hyun-Jung Song

Dong-hyeon Jang

Kil-soo Kim

Ji-Han Ko

Chang-Seong Jeon

Sung-jun Im

Young-Kun Jee

Yong-won Choi

Su-jung Hyung

Hye-young Jang

Gi-Jun Park

Eun-young Choi

Joung-phil Lee

Gwang-sun Seo

Tae-Je Cho

Tae-sung Park

Sang-Sick Park

Yun-Hyeok Im

Sang-wook Park

Ji-seok Hong

Kyol Park

Dong-Kwan Kim

Jae-Choon Kim

Myung-Kee Chung

Yong-kwan Lee

Seung-Tae Hwang

Myun-sung Kang

Jung-min Ko

Il-Young Han

Jae-Sung Kwon

A semiconductor package may include a first semiconductor chip on and electrically connected to a wiring substrate, an intermediate layer on the first semiconductor chip and covering an entire surface of the first semiconductor chip, a second semiconductor chip on the intermediate layer and electrically connected to the wiring substrate, a mold layer on the wiring substrate and covering the first semiconductor chip and the second semiconductor chip, the mold layer including one or more inner surfaces defining a mold via hole that exposes a portion of a surface of the intermediate layer, an electromagnetic shielding layer on the one or more inner surfaces of the mold layer and further on one or more outer surfaces of the mold layer, and a thermal discharge layer on the electromagnetic shielding layer in the mold via hole, such that the thermal discharge layer fills the mold via hole.

Semiconductor packages having improved thermal discharge and electromagnetic shielding characteristics

A semiconductor package includes a package substrate, a first semiconductor device arranged on the package substrate, at least one second semiconductor device on the first semiconductor device to partially cover the first semiconductor device from a top down view, a heat dissipating insulation layer coated on the first semiconductor device and the at least one second semiconductor device, a conductive heat dissipation structure arranged on the heat dissipating insulation layer on a portion of the first semiconductor device not covered by the second semiconductor device, and a molding layer on the package substrate to cover the first semiconductor device and the at least one second semiconductor device. The heat dissipating insulation layer is formed of an electrically insulating and thermally conductive material, and the conductive heat dissipation structure formed of an electrically and thermally conductive material.

Semiconductor package and method of manufacturing semiconductor package

A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Semiconductor package

A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Substrate of semiconductor package and method of fabricating semiconductor package using the same

An apparatus for fabricating semiconductor devices includes a chamber having a bottom plane, a side wall and a lid. An irradiating unit is at an interior of the chamber. A substrate mounting unit is between the bottom plane of the chamber and the irradiating unit. The irradiating unit includes an irradiating tube and a hole penetrating the central region of the irradiating tube. The irradiating tube has a hollow disk shape, and a lower surface of the irradiating tube is opened to the substrate mounting unit.

Apparatus for fabricating semiconductor devices

A semiconductor package including an internal package including at least one semiconductor chip sealed with an internal seal, an external substrate on which the internal package is mounted, and an external seal sealing the internal package is provided. Also provided is a method of manufacturing the semiconductor package including forming an internal package including at least one semiconductor chip sealed with an internal seal, mounting the internal package on an external substrate, and sealing the internal package with an external seal. The internal seal and the external seal have different Young's moduli, for example, a Young's modulus of the internal seal is smaller than a Young's modulus of the external seal. Accordingly, the semiconductor package is less susceptible to warpage and can be handled with relative ease in subsequent semiconductor package processes.

Semiconductor package and method of manufacturing the same

A semiconductor package comprises a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a third semiconductor chip on the second semiconductor chip and a fourth semiconductor chip on the third semiconductor chip. A first underfill layer is positioned between the second semiconductor chip and the first semiconductor chip; a second underfill layer is positioned between the third semiconductor chip and the second semiconductor chip, and a third underfill layer is positioned between the fourth semiconductor chip and the third semiconductor chip. In some embodiments, the second underfill layer comprises a material that is different than the first and third underfill layers.

Semiconductor packages, methods of manufacturing semiconductor packages, and systems including semiconductor packages

A method of forming a semiconductor package having a large capacity and a reduced or minimized volume includes: attaching a semiconductor substrate on a support substrate using an adhesive layer, wherein the semiconductor substrate includes a plurality of first semiconductor chips and a chip cutting region, wherein first and second ones of the plurality of first semiconductor chips are separated each other by the chip cutting region, and the semiconductor substrate includes a first surface on which an active area is formed and a second surface opposite to the first surface; forming a first cutting groove having a first kerf width, between the first and second ones of the plurality of first semiconductor chips, so that the semiconductor substrate is separated into a plurality of first semiconductor chips; attaching a plurality of second semiconductor chips corresponding to the first semiconductor chips, respectively, to the plurality of first semiconductor chips; forming a molding layer so as to fill the first cutting groove; and forming a second cutting groove having a second kerf width that is less than the first kerf width, in the molding layer, so as to separate the molding layer into individual molding layers covering one of the plurality of first semiconductor chips and corresponding one of the plurality of second semiconductor chips.

Stacked chips in a semiconductor package

A semiconductor package may include a substrate including a substrate pad on a top surface thereof; at least one semiconductor chip including a connection terminal electrically connected to the substrate on an active surface thereof, and mounted on the substrate; a heat release pattern formed between the substrate and the at least one semiconductor chip and configured to generate heat; and underfill resin underfilled between the substrate and the at least one semiconductor chip and comprising fillers. A semiconductor package may include a substrate including a substrate pad on a top surface thereof and a first heat release pattern configured to generate heat, and a semiconductor chip including a bonding pad formed on an active surface facing the substrate and a second heat release pattern configured to generate heat.

Semiconductor packages

A method of forming a semiconductor package includes attaching a semiconductor substrate on a support substrate, wherein the semiconductor substrate includes a plurality of first semiconductor chips and a chip cutting region that separates respective ones of the semiconductor chips. A first cutting groove is formed that has a first kerf width between first and second ones of the plurality of first semiconductor chips. A plurality of second semiconductor chips is attached to the plurality of first semiconductor chips. A molding layer is formed so as to fill the first cutting groove and a second cutting groove having a second kerf width that is less than the first kerf width is formed in the molding layer so as to form individual molding layers covering one of the plurality of first semiconductor chips and one of the plurality of second semiconductor chips.

Method of fabricating stacked chips in a semiconductor package

A printed circuit board (PCB) includes a wire pattern that has a low processing cost and a high yield by simplifying the structure of the PCB and can increase the joining characteristics and reliability of minute bumps when a flip-chip bonding process is performed. The PCB includes a body resin layer having lower and upper surfaces, a wire pattern on or in one of the upper and lower surfaces of the body resin layer, at least one through-hole contact extending from the wire pattern through the body resin layer, and a solder resist on the upper and lower surfaces of the body resin layer, openings of the solder resist corresponding to at least one of a solder ball land and a bump land, the solder ball land and the bump land being configured to couple the PCB to a semiconductor chip. If the solder ball land is on the one-layer wire pattern, the bump land is on the through-hole contact, and if the bump land is on the wire pattern, the solder ball land is on the through-hole contact.

Printed circuit board (PCB) including a wire pattern, semiconductor package including the PCB, electrical and electronic apparatus including the semiconductor package, method of fabricating the PCB, and method of fabricating the semiconductor package

Growing community of inventors

Hwaseong-si, South Korea

Won-keun Kim