Panagene Inc.

Wonik Ips Co., Ltd.

Won Jun Yoon

Hoon Moo Choi

Sung Hee Lee

Jong Chan Lim

Sung Kee Kim

Hyunil Lee

Sang Youl Ahn

Jae Hoon Jeon

Dong Woo Kim

Young Hoon Park

Dong Ho Ryu

Woo Hoon Sun

Jin Wu Park

Seok Kyu Choi

Tae Sung Han

In a method of forming a contact plug in a semiconductor integrated circuit device, the contact plug may be formed in a process chamber of a substrate-processing apparatus. The process chamber may have a process space. The process chamber may include a substrate supporter placed in a lower region of the process space to support a semiconductor substrate, and a gas injector placed in an upper region of the process space to inject a gas to the semiconductor substrate. An insulating interlayer having a contact hole may be formed on the semiconductor substrate loaded into the process space. A nucleation layer may be formed on an inner surface of the contact hole and an upper surface of the insulating interlayer. A semi-bulk layer may be formed on the nucleation layer in a lower region of the contact hole. An inhibiting layer may be formed on the semi-bulk layer and the exposed nucleation layer. A main-bulk layer may be formed on the semi-bulk layer to fill the contact hole with the main-bulk layer.

Method of forming a contact plug in a semiconductor integrated circuit device

Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.

Method of depositing tungsten

The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.

Substrate processing apparatus

This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oglimers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein

PNA monomer and precursor

This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: 

This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein

Method of making PNA oligomers

This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C&#x2014;R'; J is sulfur or oxygen; R&#x2032;, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrile, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural &#x3b1;-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers:wherein

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Seoul, South Korea

Won Jun Yoon