Hynix Semiconductor Inc.

Skhynix Inc.

Won-Joo Yun

Hyun-Woo Lee

Dong-Suk Shin

Nak-Kyu Park

A duty cycle correcting circuit includes a duty ratio control unit configured to alternately change logical values of a plurality of bits of a pull-up control signal and a plurality of bits of a pull-down control signal in response to a duty ratio detection signal, a duty ratio correcting unit configured to adjust driving abilities of a first driver and a second driver in response to the plurality of bits of the pull-up control signal and the plurality of bits of the pull-down control signal to output a correction clock signal, and a duty ratio detecting unit configured to detect a duty ratio of the correction clock to generate the duty ratio detection signal.

Duty cycle correcting circuit and method of correcting a duty cycle

A semiconductor integrated circuit is disclosed. The disclosed semiconductor integrated circuit of the present invention includes a DLL (Delay Locked Loop) controller that controls whether to activate a DLL at the entry of a power down mode, in response to a result of detecting whether a range of phase change of an external clock signal is within a predetermined range, and a DLL block that provides a result of comparing a reference clock signal with a feedback clock signal to the DLL controller and also provides a delay locked clock signal that is periodically updated, in response to the reference clock signal, under the control of an activated output signal from the DLL controller.

Semiconductor integrated circuit and method of controlling the same

A power-down mode control apparatus includes an internal power-down control block configured to receive a locking completion signal and to generate an internal power-down signal, which is toggled for a predetermined time; a noise check block configured to check occurrence/non-occurrence of noise on the basis of a phase detection signal and to generate a plurality of power-down selection signals in response to the locking completion signal and the internal power-down signal; and a power-down enter control block configured to generate a plurality of power-down enter signals, which instruct individual circuits to enter a power-down mode in response to a reference clock signal, the plurality of power-down selection signals, a power-down mode signal, and the internal power-down signal.

Power-down mode control apparatus and DLL circuit having the same

A phase synchronization apparatus includes an oscillator gain setting member configured to discriminate a frequency by sequentially delaying input clock signal after dividing the input clock signal at a predetermined division ratio and to generate an oscillator gain setting signal by using discriminated frequency information, and a phase locked loop (PLL) circuit configured to oscillates output clock signal having a frequency corresponding to the oscillator gain setting signal in response to the input clock signal.

Phase synchronization apparatus

A semiconductor memory apparatus includes a first delay locked loop configured to delay a system clock by a predetermined time to thereby generate a first delay locked clock synchronizing a data output timing with the system clock, a second delay locked loop configured to delay an inverse signal of the system clock by a predetermined time to thereby generate a second delay locked clock synchronizing the data output timing with the system clock, and a clock selection block configured to select one of the first and second delay locked clocks to thereby output as a reference clock for data output.

Semiconductor memory device for generating a delay locked clock in early stage

A delay locked loop (DLL) circuit includes a clock signal dividing unit that can divide a reference clock signal by a predetermined division ratio and generate a division clock signal, a feedback loop that can perform a delay locked operation on the division clock signal and generate a delay clock signal, a half period delay unit that can delay the delay clock signal by a half period of the reference clock signal and generate a half period delay clock signal, and an operation unit that can combine the delay clock signal and the half period delay clock signal and generate an output clock signal.

DLL circuit and method of controlling the same

An apparatus for setting a test mode in a semiconductor integrated circuit includes a test mode control block that generates a coding control signal according to whether or not a control fuse is cut, and a test mode coding block that sets default values of a multi-bit test code in response to the coding control signal.

Apparatus and method of setting test mode in semiconductor integrated circuit

An apparatus for setting an operation mode in a DLL circuit generates a locking completion signal according to a level of a phase comparing signal obtained by comparing phases of a reference clock and a feedback clock. During three or more cycles of a pulse signal, it is determined whether a logic value of levels of the phase comparing signal is a specific combination, and the locking completion signal is selectively enabled.

Apparatus and method of setting operation mode in DLL circuit

A delay locked loop (DLL) circuit includes a first delay control unit configured to generate a first delay control signal in response to a first phase detection signal to control a delay amount of a first delay line and to output a first delay amount information signal, a second delay control unit configured to generate a second delay control signal in response to a second phase detection signal to control a delay amount of a second delay line and to output a second delay amount information signal, and to control the delay amount of the second delay line again in response to the first delay control signal and a half cycle information signal, a half cycle detecting unit configured to receive the first delay amount information signal and the second delay amount information signal to extract half cycle information of a reference clock signal, thereby generating the half cycle information signal, and a duty cycle correcting unit configured to combine an output clock signal from the first delay line and an output clock signal from the second delay line, thereby outputting a duty ratio correction clock signal.

A delay circuit in a delay locked loop includes a first delay circuit unit for delaying an input signal using a single delay line in response to first control signals and then outputting a first delay signal and a second delay signal, and a second delay circuit unit for delaying the first delay signal and the second delay signal by delay time, which is correspondent to second control signals and third control signals, using a dual delay line and then outputting a third delay signal and a fourth delay signal.

Delay circuit of delay locked loop having single and dual delay lines and control method of the same

A data output strobe signal generating circuit includes a duty cycle correcting unit that corrects the duty ratio of an input clock in response to a control signal to generate a corrected clock. A data output strobe signal generating unit receives the corrected clock and generates a data output strobe signal. A duty cycle control unit receives the data output strobe signal and outputs the control signal.

Data output strobe signal generating circuit and semiconductor memory apparatus having the same

A semiconductor memory apparatus includes a delay line configured to delay a reference clock, a first delay block configured to delay a feedback clock, a first phase comparator configured to compare the reference clock with an output of the first delay block, a second delay block configured to delay the reference clock, a second phase comparator configured to compare the feedback clock with an output of the second delay block, a delay controller configured to control a delay amount of the delay line based on comparison results from the first and second phase comparators, a delay model configured to delay an output of the delay line by a modeled delay time to generate the feedback clock, and a locking detector configured to control the delay controller based on comparison results from the first and second phase comparators.

Semiconductor memory apparatus with a delay locked loop circuit

A DLL circuit includes a duty ratio detection unit that detects a duty ratio of a rising clock and a duty ratio of a falling clock, thereby outputting a duty ratio detection signal. A correction control unit generates a correction control signal in response to the duty ratio detection signal. A duty ratio correction unit corrects a duty ratio of an internal. clock in response to the correction control signal, thereby outputting a reference clock.

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Ichon, South Korea

Won-Joo Yun