Hynix Semiconductor Inc.

Skhynix Inc.

Samsung Electronics Co., Ltd.

Won Joo Yun

Hyun Woo Lee

Dong Suk Shin

Ki Han Kim

Yong Ju Kim

Dae Han Kwon

Hae Rang Choi

Jae Min Jang

Ki-Han Kim

Hye Seung Yu

Hyun Ui Lee

A memory package includes a plurality of memory chips stacked on a package substrate. A logic chip is disposed between the plurality of memory chips and the package substrate. The logic chip is configured to control the plurality of memory chips through a plurality of vias passing through the plurality of memory chips. An intermediate chip is connected to the plurality of vias. The intermediate chip is disposed between the plurality of memory chips and the logic chip, and is configured to select at least a subset of the plurality of vias as a data transmission path between the logic chip and the plurality of memory chips, based on a data transmission rate of the logic chip.

Memory package and memory device utilizing an intermediate chip

A method of controlling a power control circuit includes enabling a power cutoff signal when a delay locking operation of a Delay Locked Loop (DLL) circuit is completed, disabling the power cutoff signal for a predetermined time, and detecting a phase difference between a reference clock and a feedback clock to re-determine, on the basis of the detection result, whether or not to enable the power cutoff signal.

Power control circuit, method of controlling power control circuit, and DLL circuit including power control circuit

A semiconductor apparatus for generating an internal voltage includes a control code output block and an internal voltage generation block. The control code output block is configured to output a variable code having a code value corresponding to a voltage level of an internal voltage. The internal voltage generation block is configured to compare the variable code to a setting code and controls the voltage level of the internal voltage according to the comparison.

Internal voltage generation circuit for semiconductor apparatus

A clock signal duty correction circuit includes: a first transition timing control unit configured to generate a first control signal for controlling a rising timing of a duty correction clock signal by using a clock signal; a second transition timing control unit configured to generate a second control signal for varying a falling timing of the duty correction clock signal by using the clock signal according to a code signal; and a differential buffer unit configured to generate the duty correction clock signal, whose rising time or falling time is adjusted, in response to the first control signal and the second control signal.

Clock signal duty correction circuit

A clock receiver in a semiconductor integrated circuit includes a first clock buffer configured to buffer an external clock to generate a low frequency buffered clock in response to a first operation signal; a second clock buffer configured to buffer the external clock to generate a high frequency buffered clock in response to a second operation signal; and an internal clock generating unit configured to receive the low frequency buffered clock and the high frequency buffered clock, to control states of the first operation signal and the second operation signal and to generate an internal clock.

Clock receiver in semiconductor integrated circuit and method of controlling the same

A delay locked loop (DLL) circuit includes a delay line configured to generate a delay clock signal by delaying a reference clock signal in response to a delay control signal, the delay line having two or more initial activation points, wherein the initial activation points are selected according to an initial value of the delay control signal; a delay compensating unit configured to generate a feedback clock signal by delaying the delay clock signal for a predetermined time; a phase detecting unit configured to generate a phase detection signal by comparing a phase of the reference clock signal to a phase of the feedback clock signal; and a delay control unit configured to generate the delay control signal in response to the phase detection signal.

DLL circuit having activation points

A power control circuit includes a check unit that receives a reference clock and generates a check signal for cyclically activating a feedback loop of a DLL circuit, a phase detecting unit that detects a phase difference between the reference clock and a feedback clock, and generates a phase difference detection signal, and a signal combining unit that generates a power cutoff signal in response to a locking completion signal, the check signal, and the phase difference detection signal.

Various embodiments of a semiconductor integrated circuit. According to one exemplary embodiment, a semiconductor integrated circuit includes a multi-phase clock generator that is configured to generate a multi-phase internal clock; a first edge combining unit that is configured to generate a first output clock having a first frequency by combining rising edges of clocks included in the internal clock, and transmit the first output clock to a first port; and a second edge combining unit that is configured to generate a second output clock having a second frequency by combining rising edges of clocks included in the internal clock, and transmit the output clock to a second port.

Device for generating clock in semiconductor integrated circuit

A delay locked loop (DLL) apparatus includes a first delay unit converting a reference clock into a rising clock. A second delay unit converts the reference clock into a falling clock, and a replica delay unit replica-delays the rising clock. A first phase detector compares the phases of the reference clock and the delayed rising clock to output a first detection signal corresponding to the compared phases. A controller synchronizes the rising edge of the rising clock with the rising edge of the reference clock according to the first detection signal of the first phase detector. A second phase detector compares the phases of the synchronized rising clock and the synchronization clock to output a second detection signal corresponding to the compared phases. The DLL apparatus compensates for a skew between an external clock and data and between external and internal clocks by employing a single replica delay unit.

Delay locked loop apparatus

A phase synchronization apparatus includes a bias control unit configured to sequentially delay an input clock signal to generate bias control signals having multiple bits, a bias generation unit configured to generate a pull-up bias voltage having a level that corresponds to logical values of the bias control signals, and to generate a pull-down bias voltage in response to a control signal; and a voltage controlled oscillator configured to include a plurality of delay cells respectively having a pull-up terminal and a pull-down terminal to generate an output clock signal in response to the control voltage, wherein the pull-up bias voltage is supplied to the pull-up terminals of the respective delay cells and the pull-down bias voltage is supplied to the pull-down terminals of the respective delay cells.

Phase synchronization apparatus

A semiconductor integrated circuit is provided. The semiconductor integrated circuit includes: a delay locked loop (DLL) output block configured to delay an input clock signal by a predetermined time in response to a plurality of delay control signals and provide a DLL clock signal; a locking control block configured to compare a phase of a reference clock signal and a phase of a feedback clock signal, and synchronize the phase of the reference clock signal and the phase of the feedback clock signal in response to the plurality of delay control signals; and a locking detection block configured to detect whether the phase of the reference clock signal and the phase of the feedback clock signal are synchronized and the DLL clock signal is locked, wherein, when the DLL clock signal is locked, the locking control block provides the reference clock signal, which is obtained by dividing the input clock signal by n (where n is a natural number equal to or greater than 2), as an internal DLL clock signal.

Semiconductor integrated circuit having delay locked loop circuit

A semiconductor integrated circuit includes an update control unit configured to generate an update control signal in response to a first command and a second command; and a DLL (Delay Locked Loop) circuit configured to generate an output clock by controlling a phase of an external clock in response to the update control signal.

Semiconductor integrated circuit and method of controlling the same

An update control apparatus in a DLL circuit is provided. The update control apparatus includes a logic value determination, a phase information collection unit, and an update control unit. The logic value determination unit is configured to determine a logic value of a phase detection signal for a first period interval of a reference clock signal to generate a phase information signal, and configured to extend the first period interval into a second period interval when an extension instruction signal is enabled. The phase information collection unit is configured to determine consecutive logic values of an update possible signal to generate the extension instruction signal, and configured to collect the phase information signal to generate an update information signal. The update control unit is configured to generate the update possible signal, a valid interval signal, and an update control signal in response to the update information signal.

Update control apparatus in DLL circuit

A semiconductor integrated circuit includes a frequency determining unit configured to determine an operational speed of the semiconductor integrated circuit and to generate a frequency region signal; a duty cycle control unit configured to detect a duty cycle of a DLL clock and to generate a duty cycle control signal; a duty cycle correcting unit configured to generate a corrected clock by correcting a duty cycle of an input clock in response to the frequency region signal and in response to the duty cycle control signal; and a DLL (Delay Locked Loop) circuit configured to generate the DLL clock by controlling a phase of the corrected clock.

Semiconductor integrated circuit

A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.

Growing community of inventors

Ichon, South Korea

Won Joo Yun