Samsung Electronics Co., Ltd.

Palogen, Inc.

Won Jong Yoo

Kyung Joon Han

Bita Karimirad

Hua-Min Li

A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have &#x3c0;-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have &#x3c0;-binding.

Photodetector using graphene and method of manufacturing the same

A method for patterning a layer of a microelectronic device includes the step of forming an etching mask on the layer to be etched opposite the microelectronic substrate. The etching mask defines exposed portions of the material layer and the etching mask has a notch in the sidewall thereof adjacent the material layer. The exposed portions of the material layer are then etched. More particularly, the step of forming the etching mask can include the steps of forming a first patterned mask layer on the layer to be etched and forming a second patterned mask layer on the first patterned mask layer wherein the second patterned mask layer extends beyond the first patterned mask layer thereby defining the notch in the sidewall of the etching mask.

Growing community of inventors

Suwon-si, South Korea

Won Jong Yoo