Lg Chem, Ltd

Won-Jong Kwon

Tae-Hoon Kim

Cheol-Hee Park

Seung-Tae Hong

Se-Hui Sohn

Sang-Ho Kim

Sang-Bok Lee

Sun-Ah Park

Jung-Won Kang

Min-Jin Ko

Myung-Sun Moon

Bum-Gyu Choi

Gwi-Gwon Kang

Dong-Seok Shin

Young-Duk Kim

Kyung-Hoon Lee

Sang-Uck Lee

Yun-Il Hwang

Jae-Hong Kim

Hyeon Sik Choi

Hyuk Joo Kim

Sun-Mi Jin

Jae-Jin Kim

Jae-Seung Oh

Byoung-Bae Lee

Sung-Ho Yoon

Shin-Jung Choi

Bu-Gon Shin

Hye-Yeong Nam

Jung-Won Park

Gyo-Hyun Hwang

Jae-Duk Park

Byung-Ro Kim

Sang-Min Park

Hae-Young Nam

Young-Soo Lim

Ki-Seok Jang

Su-Jin Mun

Young-Hee Lim

Thermoelectric conversion materials, expressed by the following formula: BiMCuOQ1TeQ2. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0&#x2266;x&#x3c;1, 0&#x3c;w&#x3c;1, 0.2&#x3c;a&#x3c;4, 0&#x2266;y&#x3c;4, 0.2&#x3c;b&#x3c;4, 0&#x2266;z&#x3c;4 and x+y+z&#x3e;0. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Thermoelectric conversion material and producing method thereof, and thermoelectric conversion element using the same

Compound semiconductors, expressed by the following formula: BiMCuOQ1TeQ2. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0&#x2266;x&#x3c;1, 0&#x3c;w&#x2266;1, 0.2&#x3c;a&#x3c;4, 0&#x2266;y&#x3c;4, 0.2&#x3c;b&#x3c;4 and 0&#x2266;z&#x3c;4. These compound semiconductors may be used for various applications such as solar cells or thermoelectric conversion elements, where they may replace compound semiconductors in common use, or be used along with compound semiconductors in common use.

The present invention relates to a belt-shaped metal nanostructure in which a wide surface area of catalytically active material can be realized even by a relatively small amount thereof so that it shows an excellent catalytic activity, and a method for preparing same.

Belt-shaped metal nanostructure and method for preparing same

A privacy filter and its preparation method are disclosed. One embodiment of the privacy filter comprises: a first transparent substrate; a second transparent substrate positioned a predetermined distance apart from and opposite to the first transparent substrate; an electrolyte filled between the first and second transparent substrates; and a second transparent conductive layer disposed between the electrolyte and the second transparent substrate. The first transparent substrate comprises: an uneven pattern having a wire grid and trenches formed on the first transparent substrate; a first transparent conductive layer formed on the wire grid and the trenches of the uneven pattern; and an electrochromic layer being formed on the first transparent conductive layer along the sidewall of the wire grid and containing an electrochromic material to transmit or absorb visible light depending on whether an electrical signal is applied or not.

Privacy filter comprising a wire grid

This disclosure relates to a method of preparing a metal nanobelt. According to the method, a metal nanobelt having various applicabilities, for example, capable of easily forming a conductive film or a conductive pattern with excellent conductivity, may be easily prepared by a simple process at room temperature and atmospheric pressure. The method comprises reacting a conductive polymer and a metal salt.

Preparation method of metal nanobelt

The present invention relates to a metal nanobelt and a method of manufacturing the same, and a conductive ink composition and a conductive film including the same. The metal nanobelt can be easily manufactured at a normal temperature and pressure without requiring the application of high temperature and pressure, and also can be used to form a conductive film or conductive pattern that exhibits excellent conductivity if the conductive ink composition including the same is printed onto a substrate before a heat treatment or a drying process is carried out at low temperature. Therefore, the metal nanobelt and the conductive ink composition may be applied very appropriately for the formation of conductive patterns or conductive films for semiconductor devices, displays, solar cells in environments requiring low temperature heating. The metal nanobelt has a length of 500 nm or more, a length/width ratio of 10 or more, and a width/thickness ratio of 3 or more.

Metal nanobelt and method of manufacturing the same, and conductive ink composition and conductive film comprising the same

Thermoelectric conversion materials, expressed by the following formula: BiMCuOQ1TeQ2. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0&#x2266;x&#x3c;1, 0&#x3c;w&#x2266;1, 0.2&#x3c;a&#x3c;4, 0&#x2266;y&#x3c;4, 0.2&#x3c;b&#x3c;4 and 0&#x2266;z&#x3c;4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Thermoelectric conversion material and producing method thereof; and thermoelectric conversion element using the same

Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: BiCuOTe, where 0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;z&#x3c;1 and x+y+z&#x3e;0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Thermoelectric conversion materials, expressed by the following formula: BiMCuOQ1TeQ2. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Ti, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0&#x2266;x&#x3c;1, 0&#x3c;w&#x2266;1, 0.2&#x3c;a&#x3c;4, 0&#x2266;y&#x3c;4, 0.2&#x3c;b&#x3c;4 and 0&#x2266;z&#x3c;4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Disclosed is a new compound semiconductor represented by the chemical formula: BiLnMCuOTe where Ln belongs to the lanthanoid series and is any one or more elements selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, M is any one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, and 0&#x3c;x&#x3c;1, 0&#x2266;y&#x2266;1 and 0&#x3c;x+y&#x3c;1. The compound semiconductor can replace a conventional compound semiconductor or be used as a thermoelectric conversion device together with a conventional compound semiconductor.

Compound semiconductor and its manufacturing method, and thermoelectric conversion device using the same

Provided are a method for preparing an electrode system, an electrode system prepared therefrom, and an electric device including the same. The method includes the steps of forming a porous template having nanopores on a first electrode, wherein a diameter of the nanopores is between 5 to nm 500 nm; and forming a rod-type/tube-type second electrode inside the nanopores which are connected to the first electrode, the electrode system prepared therefrom, and an electric device including the same. With the large surface area, the electrode system of the present research improves efficiency and performance of various electric devices. The contrast and respond speed of the electrochromic device can be increased, and the number of electron-hole pairs of a solar cell is increased. The loss of electron-hole pairs is minimized, and charge storage of the supercapacitor and charge respond speed is heightened.

Method for preparing electrode system, electrode system prepared therefrom, and electric device comprising the same

The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.

Organic silicate polymer and insulation film comprising the same

The present invention relates to an electropolymerization method for preparing a nanotube-type conducting polymer using a porous template, a method for preparing an electrochromic device using electrochromism of the conducting polymer, and an electrochromic device prepared therefrom, and more particularly to an electropolymerization method for preparing a nanotube-type conducting polymer using a porous template to prepare an electrochromic device having good electrochromism by injecting an electrolyte solution wherein a precursor of the electrochromic conducting polymer is dissolved into an electrochemical reaction cell comprising a first transparent electrode and a working electrode, which is a porous template on the electrode, a method for preparing an electrochromic device using electrochromism of the conducting polymer, and an electrochromic device prepared therefrom.

Electropolymerization method for preparing nano-tube type conducting polymer using porous template, method for preparing electrochromic device, and electrochromic device prepared therefrom

The present invention relates to an electropolymerization method for preparing a nanotube-type conducting polymer using a porous template, a method for preparing an electrochomic device using electrochromism of the conducting polymer, and an electrochromic device prepared therefrom, and more particularly to an electropolymerization method for preparing a nanotube-type conducting polymer using a porous template to prepare an electrochromic device having good electrochromism by injecting an electrolyte solution wherein a precursor of the electrochromic conducting polymer is dissolved into an electrochemical reaction cell comprising a first transparent electrode and a working electrode, which is a porous template on the electrode, a method for preparing an electrochromic device using electrochromism of the conducting polymer, and an electrochromic device prepared therefrom.

Growing community of inventors

Daejeon, South Korea

Won-Jong Kwon