Skhynix Inc.

Won-Jin Jung

Keun-Woo Lee

Ga-Ram Han

Yoon-Seong Seo

A memory system includes: a memory device; and a non-erase block management device suitable for determining, when an erase operation is performed on a first memory block included in the memory device, whether to perform a read operation on a second word line of a second memory block, according to a location of a first word line, which is a target word line for a read operation on the second memory block, wherein the second word line includes a target word line for a dummy read operation.

Memory system capable of preventing read fail, including reading a second memory block through a dummy read operation, when an erase operation is performed to a first memory block, and operating method thereof

A memory system may include: a memory device including a memory cell array, the memory cell array including a plurality of scan areas, each of the plurality of the scan areas including at least two group areas, each of the group areas including a flag area storing a flag that represents whether a corresponding group area is programmed or not; and a controller suitable for requesting the memory device to read the flag of each of the group areas a flag when a sudden power-off occurs, and rebuilding at least one of the group areas when at least one of the flags is in an erase state.

Memory system and method for operating the memory system

An operating method of a controller includes: searching, by using a predetermined read voltage, a valid word line coupled to a memory cell having a predetermined program status, among word lines coupled to a first open memory block of a memory device when a memory system is powered on after a sudden power off (SPO); and reading data from the memory cell coupled to the valid word line, and writing the read data into a second open memory block.

Controller and operating method thereof

A memory device may include: a memory cell array comprising a plurality of search regions, each of the search regions comprising a plurality of group regions, each of the group regions comprising a flag cell, each flag cell comprising information indicating whether the corresponding group region is programmed; a voltage generator suitable for generating a read bias voltage for the memory cell array according to a voltage control signal; and a memory controller suitable for selecting a search region and controlling the voltage generator to adjust the read bias voltage based on information of flag cell of the selected search region when a read command is received, and controlling a read operation for the selected search region based on the adjusted read bias voltage.

Memory system and operating method thereof

A memory system includes: a memory device including a plurality of blocks each block including a plurality of pages, suitable for performing an operation in response to a command and an address; and a controller suitable for determining whether a block in which a read fail has occurred is an open block including an unprogrammed page, performing a restoration operation for the unprogrammed page of the open block based on at least one of operation temperature information and a read count, when it is determined that the block in which the read fail has occurred is the open block, and generating the command for performing a read retry operation.

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Gyeonggi-do, South Korea

Won-Jin Jung