Electronics and Telecommunications Research Institute

Lg Energy Solution, Ltd.

Korea Atomic Energy Research Institute

Won-Jae Lee

Byoung-Gon Yu

Hag-Young Kim

Chang-Soo Kim

Yong-Ju Lee

In-Kyu You

Kyoung-Ik Cho

Seung-Jo Bae

Song-woo Sok

Jin-Hwan Jeong

Kee-Nam Song

Bo-Woo Kim

Seung-Hyub Jeon

Yil-Suk Yang

Ok-Gee Min

Yong-Wan Kim

Choon-Seo Park

Yoo-Hyun Park

Jin-Mee Kim

Yu-Hyeon Bak

Sang-Min Woo

Shi-Ho Kim

Jong-Wha Chang

An apparatus and method for testing a circuit board included in a battery management system. The circuit board includes a first test point connected in common to one end of a first resistor, one end of a first capacitor and one end of a second resistor; a second test point connected in common to the other end of the second resistor and one end of a second capacitor; a third test point connected to the other end of the first resistor; and a fourth test point connected in common to the other end of the first capacitor and the other end of the second capacitor. The apparatus determines an open-circuit fault of at least one of the first capacitor and the second capacitor based on a first diagnosis voltage between the first and fourth test points and a second diagnosis voltage between the second and fourth test points.

Apparatus and method for testing circuit board included in battery management system

Provided is a method of designing a coaxial dual-tube type hot gas duct for a very-high-temperature reactor. When determining the outer diameter of an inner tube and the inner diameter of a pressure tube, both of which defines an annular part of the hot gas duct having a dual-tube shape, one selected from hydraulic heads, flow rates, and hydraulic heads of very-high-temperature helium gas flowing to a very-high-temperature region and low-temperature helium gas flowing to a low-temperature region is taken into consideration as well as is a relation of about heat balance model, so that it is possible to minimize flow induced vibrations caused by the flow of a fluid.

Method for designing concentric axis double hot gas duct for very high temperature reactor

Provided is an availability prediction method for a high availability. The method includes calculating a basic survival probability that the other node survives until a failure on one node of two nodes constituting a cluster is fixed, and determining an optimal number of nodes meeting a preset reference availability probability by calculating an availability probability for a predetermined range of the number of nodes on the basis of the basic survival probability. The method determines the number of nodes in the high availability cluster so as to match a reference availability probability, and is able to accomplish an optimal configuration of a cluster by calculating the availability probabilities for combinations between active node and passive nodes and between head nodes and switches.

Availability prediction method for high availability cluster

Provided is a contents distribution management system and method for supporting a plurality of global servers that provide the contents and managing the contents by applying different policies based on the global server and service type of the contents. The inventive system comprises a plurality of global servers for supplying contents to a plurality of local servers, each global server having a large capacity contents library, and the local servers for managing the contents provided from the global servers based on global servers and service types using contents tables, and providing a contents service in response to a contents streaming service demand from a last terminal using a local contents cache.

Contents distribution management system with multi-service type management function and method thereof

An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.

Apparatus for forming strontium-tantalum-oxide thin film

A nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend lifetime of memory. A reference cell of the memory is activated to provide a reference voltage to a sense amplifier only when the sense amplifier needs the reference voltage. The memory comprises a plurality of cells arranged in a matrix form and including memory cells and reference cells, and a plurality of sense amplifiers arranged in a row of the matrix, in which each sense amplifier compares voltages induced from a reference cell and a selected memory cell to read information stored in the selected memory cell, and in which each reference cell is activated only when both a selection signal from a column address and a word line connected to said reference cell are enabled.

Nonvolatile ferroelectric memory using selective reference cell

Growing community of inventors

Daejeon, South Korea

Won-Jae Lee