Skhynix Inc.

Intops Co., Ltd.

Other

Lumens Co., Ltd.

Shinwha Intertek Corporation

Kim, Keun Ha

Won Jae Choi

Jea Won Choi

Hong Il Lee

Keun Ha Kim

Hyun Chul Cho

Min Su Kim

Duck Ju Kim

Soo Kun Jeon

Se Chun Park

Jeong Hwan Kim

Sung Chul Yoon

Tae Heui Kwon

Moon Soo Sung

Seung Ho Baek

Dong Hyun Kim

Geun Mo Jin

Cheol Heung Ahn

Yeon Ho Jeong

Gwan Park

Da Woon Han

Hak-Soo Kim

Sung Bak Kim

Su-Han Woo

Jin Go

Dae-Bok Park

Ki Chang Gwon

Geon Il Hong

Hong Ii Lee

A page buffer may include a bit line connection circuit configured to connect or disconnect a bit line and a first node, a plurality of latch circuits that is connected to the first node in common. The page buffer may further include, and logical operation circuit configured to perform a logical operation by using one or more of a voltage level of the first node and a voltage level of a second node as an input and to set the voltage level of the first node responsive to results of the operational operation.

Page buffer, semiconductor device including page buffer, and operating method of semiconductor device

Provided herein may be a nonvolatile semiconductor memory device. The nonvolatile semiconductor memory device may include a memory cell array, a read and write circuit, and a control logic. The memory cell array may include a plurality of nonvolatile memory cells. The read and write circuit may be configured to perform a program operation or a read operation on nonvolatile memory cells that are selected from among the plurality of nonvolatile memory cells. The control logic may be configured to control an operation of the read and write circuit. The read and write circuit may include at least one capacitor configured to store bit data.

Nonvolatile semiconductor memory device including a data storing capacitor in each page buffer

The present disclosure relate to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a semiconductor light emitting chip, and first electrodes electrically connected to the semiconductor light emitting chip, with the first electrodes each having a planar area larger than that of the semiconductor light emitting chip, wherein lower surfaces of the first electrodes are exposed externally, and an insulating material is filled in-between inner lateral surfaces of the first electrodes.

Semiconductor light emitting device and method of manufacturing the same

A memory device including a plurality of memory cells, a peripheral circuit, and control logic. The peripheral circuit is configured to generate a plurality of operating voltages used in a memory operation, based on a target pump clock, and perform the memory operation by using the plurality of operating voltages. The control logic is configured to select the target pump clock among a plurality of pump clocks, based on a number of data bits which selected memory cells on which the memory operation is to be performed among the plurality of memory cells store, and control the peripheral circuit to perform the memory operation on the selected memory cells.

Memory device for generating pump clock and operating method of the memory device

A memory system includes a first memory die including multiple planes each including a plurality of memory cells and a controller configured to perform data communication with the first memory die through a first channel, and transfer at least two commands from among commands for an erase operation, a read operation, a program operation, and a check operation to the first memory die. After transferring an erase command to a plane among the multiple planes, the controller transfers a read command, a program command, or a check command to another plane among the multiple planes while the first memory die performs an erase operation corresponding to the erase command in the plane.

Memory device supporting interleaved operations and memory system including the same

The present technology relates to a memory device. A memory device according to the present technology may include a plurality of planes, individual operation controllers configured to respectively control read operations on the plurality of planes, a common operation controller configured to control a program operation or an erase operation on any one of the plurality of planes, a command decoder configured to provide a read command among the plurality of commands to an individual operation controller that controls a plane that is indicated by an address that corresponds to the read command among the individual operation controllers, and configured to provide a program command or an erase command among the plurality of commands to the common operation controller, and a peripheral circuit configured to generate operation voltages that are used for the read operations, the program operation, and the erase operation.

Memory device and memory system including the same

According to the present technology, a memory device may include memory cells configured to be programmed so that each of the memory cells has a threshold voltage corresponding to any one of a plurality of program states, a peripheral circuit configured to perform a read operation or a program operation on the memory cells, and control logic configured to control the peripheral circuit to perform a test read operation of reading the memory cells using a test read voltage that is any one read voltage among preset default read voltages, and perform a refresh program operation of applying a refresh program voltage to some memory cells among the memory cells according to the number of memory cells having a threshold voltage greater than the test read voltage.

Memory device and method of operating the memory device

The present technology relates to an electronic device. A memory system for increasing reliability of data includes a memory device including a plurality of pages, and a memory controller configured to correct an error in read data obtained by reading a selected page among the plurality of pages, and determine whether to perform a refresh operation on the selected page based on a number of error bits included in the read data. The memory controller comprises a normal read operation controller configured to control a read operation on the selected page and determine the number of error bits in the read data, an error correction performance component configured to correct the read data, and a data recovery controller configured to control the refresh operation on the selected page based on the number of error bits in the read data when the error in the read data is corrected.

Memory system and method of operating the same

A memory device includes a plurality of memory cell arrays each configured to include a plurality of memory cells, a plurality of peripheral circuits each configured to perform operations on the plurality of memory cell arrays, a plurality of control logics configured to control the plurality of peripheral circuits, and a control logic selector configured to activate at least one control logic among the plurality of control logics according to a type of a command received from the memory controller.

Memory device and operating method of the memory device

The present technology includes a voltage generator and a memory device including the voltage generator. The voltage generator includes an operation code determiner configured to output a clock control code including the number of planes in response to an operation code, a clock group configured to simultaneously generate clocks having different periods according to the clock control code, and a pump group configured to perform a pumping operation according to the clocks and output operation voltages.

Voltage generator and memory device having the voltage generator

The present technology relates to a memory device and a method of operating the memory device. The memory device includes a target block manager configured to store a target block address on which a refresh operation is to be performed and output a refresh signal for the target block corresponding to the target block address when an auto refresh command is received, and a data transmission controller configured to output a transmission signal and a buffer control signal for transmitting data between the target block or the buffer block and the temporary buffer circuit in response to the refresh signal.

Memory device and method of operating the same

A memory device includes a memory cell array, a read operator, a shift level determiner, and a read operation controller. The read operator applies a read voltage to a selected word line coupled to selected memory cells and reads the selected memory cells in response to an evaluation signal. The shift level determiner calculates a shift value indicating a difference between a number of memory cells read as on-cells and a reference number, and determines a shift level of a threshold voltage distribution for the selected memory cells. The soft read table storage stores soft read set parameters. The read operation controller determines a plurality of soft read voltages based on the shift level and the soft read set parameters and controls the read operator in response to the evaluation signal.

Storage device and method of operating the same

Disclosed herein is a method of manufacturing an interior material, which can implement various and distinct light emission effects by disposing a light-blocking layer configured to block light emitted from a light source on a wood layer or transparent film and then allowing the component of the transparent film to fill lighting grooves formed by laser-etching. Since a tape configured to support an island is employed, stable manufacturing is possible throughout an overall process.

Interior material having composite layer structure capable of light emission through various logo patterns and method of manufacturing the same

Interior materials are attached to an outer surface of a plastic injection mold and expose, to outside, light selectively emitted from a light source arranged in the plastic injection mold. The interior materials include a wood pattern layer formed of natural wood and having a plurality of first lighting holes through which the light passes, a light block layer coupled to a rear surface of the wood pattern layer, blocking light, and having a plurality of second lighting holes formed therein corresponding to the plurality of first lighting holes, and a touch sensor electrode coupled to a rear surface of the light block layer. As texture of natural wood is embodied on the surface of the interior materials, and the surface of interior materials emits light and simultaneously, an operation of a preset function in the interior materials may be controlled by touching the surface of interior materials.

Interior material and method for manufacturing same

Provided herein may be a memory device and a method of operating the memory device. The memory device may include memory cells configured to store data, a peripheral circuit configured to perform program and read operation on memory cells selected from among the memory cells, and a refresh controller configured to include a counter and a refresh manager, wherein the counter is configured to count a number of memory cells which are in an erased state or a programmed state by performing a read operation on the selected memory cells using a reference read voltage, and the refresh manager is configured to compare a read count indicating the counted number of memory cells, with a preset reference count, to determine whether to shift the reference read voltage and to control the peripheral circuit so that the program operation is performed using a voltage different than a program voltage by a step voltage.

Growing community of inventors

Icheon-si, South Korea

Won Jae Choi