Samsung Electronics Co., Ltd.

Won-hyuk Lee

Do-hyoung Kim

Doo-Young Lee

Hong-sik Shin

Seo-bum Lee

Hyon-wook Ra

Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.

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Incheon, South Korea

Won-hyuk Lee