Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Postech Foundation

Pohang University of Science and Technology Foundation

Won-Hyouk Jang

Joo-Hwa Lee

Si-Hyun Lee

Eu-Gene Kang

Sang-Hyeon Choi

Sung-Hoon Kim

Do-Young Kim

Dong-Hyun Kim

Chan Kwak

Jun-Won Suh

Jong-Ki Lee

Alexey Alexandrovichserov

Woong-Ho Cho

Min-Jeong Hwang

Jung-Kurn Park

Eugene Kang

Myeong-Ju Ha

Dong-Yun Lee

Jong-ki Lee

Hyo-Jin Han

Kil-Ho Ok

Sang-Min Jeon

Hyung-Keun Lee

Joseph Jeong

A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

Device and method for fabricating display device

A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

System for sputtering and method thereof

A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

Method for controlling critical dimension in semiconductor production process, and semiconductor manufacturing line supporting the same

A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

Virtual measuring device and method

The disclosed is a density sensing device of a fuel cell system and a fuel cell system having the density sensing device. The density sensing device includes a density sensor that includes a collision sensor and a variable resistor coupled to the collision sensor. The collision sensor is dipped into a fuel solution, and the collisions of molecules of the fuel solution are detected in the collision sensor. The resistance of the variable resistor varies depending on an amount of the collision detected by the collision sensor. The resistance further is converted to a density by the use of a table that includes a relationship between resistance and density. The density sensing device can further include a sensor driver. The sensor driver can be a piezoelectric member that is attached to the collision sensor. The collision sensor vibrates together with the piezoelectric member when a driving signal is applied to the piezoelectric member, which improves the accuracy of the measurement of the density.

Density sensing device and fuel cell system with it

A fuel cartridge coupler to couple a cartridge body storing fuel to a fuel cell system, the fuel cartridge coupler including: a first coupling member arranged in the cartridge body; a second coupling member assembled with the first coupling member in the fuel cell system; a first nozzle assembly including a first fluid path to discharge fuel stored in the cartridge body, the fuel cartridge being elastically supported by the first coupling member and biased by the second coupling member to open and close the first fluid path; and a second nozzle assembly including a second fluid path to inject the fuel passing through the first fluid path into the fuel cell system, the second nozzle assembly being elastically supported by the second coupling member and biased by the first nozzle assembly to open and close the second fluid path.

Fuel cartridge coupler for fuel cell

A membrane-electrode assembly for a mixed reactant fuel cell system is provided. The membrane-electrode assembly does not require a separator that physically separates the membrane-electrode assemblies from each other in a stack. The membrane-electrode assembly of the present invention instead includes an electrode substrate that is disposed on a surface of an anode or a cathode of the membrane-electrode assembly. The electrode substrate has a flow path, through which a fuel and an oxidant are supplied. The fuel and oxidant are absorbed into the electrode substrate and further into the anode and the cathode. The fuel and the oxidant are selectively oxidized and reduced in the anode and the cathode, respectively, to produce electricity.

Membrane-electrode assembly for mixed reactant fuel cell and mixed reactant fuel cell system including the same

A method of controlling a flow rate of fuel in a fuel supply unit of a fuel cell system is provided. The fuel cell system includes a fuel pump, a revolution per minute (RPM) measuring unit, a microcomputer, and a power converter. The method of controlling the flow rate controls the fuel supply unit so as to supply the fuel to a reformer reforming the fuel to generate hydrogen or a stack generating electric energy through a reaction of the fuel and oxygen. The method of controlling the flow rate includes measuring an actual RPM of the fuel pump; comparing the actual RPM to a reference RPM of the fuel pump; and adjusting a driving voltage of the fuel pump on the basis of the comparison result.

Method of correcting flow rate in fuel supply unit of fuel cell system

Growing community of inventors

Suwon-si, South Korea

Won-Hyouk Jang