Samsung Electronics Co., Ltd.

Won-goo Hur

Min Soo Kim

Hyun-Young Kim

Kyu-Tae Na

Sang-yeob Song

Gi-bum Kim

Je-hyeon Park

Ju-heon Yoon

Sang-yeon Kim

A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Semiconductor light-emitting device

Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NFand NH, HF and NH, and N, H, and NF, dissociating the etchant source, forming an etchant of NHF and NHF.HF through the dissociation, producing solid by-products of (NH)SiFthrough the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF, NH, and HF.

Methods of forming a metal silicide layer for semiconductor devices

Growing community of inventors

Incheon, South Korea

Won-goo Hur